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参数资料
| 型号： | SI8417DB-T2-E1 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 14.5A 2X2 6MFP |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 14.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 57nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2220pF @ 6V |
| 功率 - 最大： | 6.57W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-MICRO FOOT? |
| 供应商设备封装： | 6-Micro Foot? |
| 包装： | 带卷 (TR) |
Si8417DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (2.4 mm x 2 mm, 0.8 mm PITCH)
e
e
e
Recommended Land
S1
Backside Labels
D
e
s
R
e
6 Bumps (Note 2)
Q
e
E
Note 3
A2
A1
Bump Diameter:
φ 0.38 to 0.40 mm
P
A
1
2
Notes (Unless Otherwise Specified):
1. All dimensions are in millimeters.
2. Six (6) solder bumps are 95.5Sn/3.8Ag/0.7Cu with diameter ? 0.38 mm to 0.40 mm.
3. Backside surface is coated with a Ti/Nl/Ag layer.
4. Non-solder mask defined copper landing pad.
5. The flat side of wafers is oriented at the bottom.
6. · ? is location of Pin 1P.
Dim.
A
A 1
A 2
Millimeters a
Min. Max.
0.600 0.650
0.260 0.290
0.340 0.360
Inches
Min. Max.
0.0236 0.0256
0.0102 0.0114
0.0134 0.0142
PAD DISTRIBUTION TABLE
P Q
1 Drain Gate
2 Drain Source
R
Source
Source
b
D
E
e
S
S1
0.370
1.920
2.320
0.750
0.370
0.580
0.410
2.000
2.400
0.850
0.400
0.600
0.0146
0.0756
0.0913
0.0295
0.0150
0.0228
0.0161
0.0787
0.0945
0.0335
0.0157
0.0236
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73531 .
Document Number: 73531
S11-1382-Rev. D, 11-Jul-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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