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| 型号： | SST85LD1001T-60-RI-LBTE |
| 元件分类： | 存储控制器/管理单元 |
| 英文描述： | IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91 |
| 封装： | 12 X 24 MM, ROHS COMPLIANT, MO-210, LBGA-91 |
| 文件页数： | 10/36页 |
| 文件大小： | 913K |
| 代理商： | SST85LD1001T-60-RI-LBTE |
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2009 Silicon Storage Technology, Inc.
S71382-04-000
10/09
18
512 MByte / 1 GByte / 2 GByte NANDrive
SST85LD0512 / SST85LD1001T / SST85LD1002U
Data Sheet
Word 59: Multiple Sector Setting
This field contains a validity flag in the Odd Byte and the current number of sectors that can be trans-
ferred per interrupt for Read/Write Multiple in the Even Byte. The Odd Byte is always 01H which indi-
cates that the Even Byte is always valid.
The Even Byte value depends on the value set by the Set Multiple command. The Even Byte of this
word by default contains a 00H which indicates that Read/Write Multiple commands are not valid.
Word 60-61: Total Sectors Addressable in LBA Mode
This field contains the number of sectors addressable for the NANDrive in LBA mode only.
Word 63: Multi-word DMA Transfer Mode
This field identifies the multi-word DMA transfer modes supported by the NANDrive and indicates the
mode that is currently selected. Only one DMA mode can be selected at any given time.
Bit
Function
15-11
Reserved
10
Multi-word DMA mode 2 selected
1: Multi-word DMA mode 2 is selected and bits 8 and 9 are cleared to 0
0: Multi-word DMA mode 2 is not selected.
9
Multi-word DMA mode 1 selected
1: Multi-word DMA mode 1 is selected and 8 and 10 should be cleared to 0.
0: Multi-word DMA mode 1 is not selected.
8
Multi-word DMA mode 0 selected
1: Multi-word DMA mode 0 is selected and bits 9 and 10 are cleared to 0.
0: Multi-word DMA mode 0 is not selected.
7-3
Reserved
2
Multi-word DMA mode 2 supported
1: Multi-word DMA mode 2 and below are supported and Bits 0 and 1 are set to 1.
1
Multi-word DMA mode 1 supported
1: Multi-word DMA mode 1 and below are supported.
0
Multi-word DMA mode 0 supported
1: Multi-word DMA mode 0 is supported.
Word 64: Advanced PIO Data Transfer Mode
Bits [7:0] is defined as the PIO data and register transfer supported field. If this field is supported, bit 1
of word 53 shall be set to one. This field is bit significant. Any number of bits may be set to one in this
field by the device to indicate the PIO modes the device is capable of supporting. Of these bits, bits
[7:2] are Reserved for future PIO modes.
Bit
Function
0
1: NANDrive supports PIO Mode-3.
1
1: NANDrive supports PIO Mode-4.
相关PDF资料 |
PDF描述 |
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| SST85LD1004T-60-RI-LBTE | IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST85LD1002L-60-4C-LBTE | 功能描述:闪存 2G NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1002L-60-PC-LBTE | 功能描述:闪存 2GB NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1002U-60-5I-LBTE | 功能描述:闪存 2G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1002U-60-RI-LBTE | 功能描述:闪存 2GB NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST85LD1004M-60-4C-LBTE | 功能描述:闪存 4G NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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