参数资料
型号: SST85LD1001T-60-RI-LBTE
元件分类: 存储控制器/管理单元
英文描述: IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
封装: 12 X 24 MM, ROHS COMPLIANT, MO-210, LBGA-91
文件页数: 22/36页
文件大小: 913K
代理商: SST85LD1001T-60-RI-LBTE
2009 Silicon Storage Technology, Inc.
S71382-04-000
10/09
29
512 MByte / 1 GByte / 2 GByte NANDrive
SST85LD0512 / SST85LD1001T / SST85LD1002U
Data Sheet
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D.C. Voltage on Pins1 I3, I4, O4, and O5 to Ground Potential . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
1. Refer to Table 1 for pin assignment information.
Transient Voltage (<20 ns) on Pins1 I3, I4, O4, and O5 to Ground Potential . . . . . . -2.0V to VDD+2.0V
D.C. Voltage on Pins1 I1, I2, O1, O2, and O6 to Ground Potential . . . . . . . . . . . . -0.5V to VDDQ+0.5V
Transient Voltage (<20 ns) on Pins1 I1, I2, O1, O2, and O6 to Ground Potential . -2.0V to VDDQ+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Through Hole Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .300°C
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
Table 13: Absolute Maximum Power Pin Stress Ratings
Parameter
Symbol
Conditions
Input Power
VDDQ
VDD
-0.3V min to 6.5V max
-0.3V min to 4.0V max
Voltage on all pins with respect to VSS
-0.5V min to VDDQ + 0.5V max
T13.0 1382
Table 14: Operating Range
Range
Ambient
Temperature
VDDQ
VDD
3.3V
5V
3.3V
Min
Max
Min
Max
Min
Max
Industrial
-40°C to +85°C
3.135V
3.465V
4.5V
5.5V
3.135V
3.465V
Table 15: AC Conditions of Test1
1.
Input Rise/Fall Time
Output Load
10 ns
CL = 100 pF
T15.1 1382
相关PDF资料
PDF描述
SST85LD1004T-60-RI-LBTE IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
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相关代理商/技术参数
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SST85LD1002L-60-4C-LBTE 功能描述:闪存 2G NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST85LD1002L-60-PC-LBTE 功能描述:闪存 2GB NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST85LD1002U-60-5I-LBTE 功能描述:闪存 2G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST85LD1002U-60-RI-LBTE 功能描述:闪存 2GB NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST85LD1004M-60-4C-LBTE 功能描述:闪存 4G NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel