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| 型号： | ST7FSCR1E4U1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, QCC64 |
| 封装： | QFN-64 |
| 文件页数： | 78/101页 |
| 文件大小： | 4506K |
| 代理商： | ST7FSCR1E4U1 |
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ST7SCR1E4 ST7SCR1R4
78/101
14 ELECTRICAL CHARACTERISTICS
14.1 ABSOLUTE MAXIMUM RATINGS
This product contains devices for protecting the in-
puts against damage due to high static voltages,
however it is advisable to take normal precautions
to avoid appying any voltage higher than the spec-
ified maximum rated voltages.
For proper operation it is recommended that VI
and VO be higher than VSS and lower than VDD.
Reliability is enhanced if unused inputs are con-
nected to an appropriate logic voltage level (VDD
or VSS).
Power Considerations. The average chip-junc-
tion temperature, TJ, in Celsius can be obtained
from:
TJ =
TA + PD x RthJA
Where:
TA =
Ambient Temperature.
RthJA =Package thermal resistance
(junction-to ambient).
PD =
PINT + PPORT.
PINT =IDD x VDD (chip internal power).
PPORT =Port power dissipation
determined by the user)
Stresses above those listed as “absolute maxi-
mum ratings” may cause permanent damage to
the device. This is a stress rating only and func-
tional operation of the device at these conditions is
not implied. Exposure to maximum rating for ex-
tended periods may affect device reliability.
General Warning: Direct connection to VDD or VSS of the I/O pins could damage the device in case of program counter
corruption (due to unwanted change of the I/O configuration). To guarantee safe conditions, this connection has to be
done through a typical 10K
Ω pull-up or pull-down resistor.
Thermal Characteristics
Symbol
Ratings
Value
Unit
VDD - VSS
Supply voltage
6.0
V
VIN
Input voltage
VSS - 0.3 to VDD + 0.3
V
VOUT
Output voltage
VSS - 0.3 to VDD + 0.3
V
ESD
ESD susceptibility
2000
V
ESDCard
ESD susceptibility for card pads
4000
V
IVDD_i
Total current into VDD_i (source)
250
mA
IVSS_i
Total current out of VSS_i (sink)
250
Symbol
Ratings
Value
Unit
RthJA
Package thermal resistance
LQFP64
SO24
QFN24
60
80
42
°C/W
TJmax
Max. junction temperature
150
°C
TSTG
Storage temperature range
-65 to +150
°C
PDmax
Power dissipation
QFN24
SO24
600
500
mW
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