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参数资料
| 型号： | V59C1512164QALP37I |
| 厂商： | PROMOS TECHNOLOGIES INC |
| 元件分类： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, PBGA92 |
| 封装： | GREEN, FBGA-92 |
| 文件页数： | 16/79页 |
| 文件大小： | 1028K |
| 代理商： | V59C1512164QALP37I |
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ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
Bank Activate Command
The Bank Activate command is issued by holding CAS and WE high with CS and RAS low at the rising edge
of the clock. The bank addresses of BA0 - BA 2 are used to select the desired bank. The row addresses A0
through A13 are used to determine which row to activate in the selected bank for x4 and x8 organised compo-
nents. For x16 components row addresses A0 through A12 have to be applied. The Bank Activate command
must be applied before any Read or Write operation can be executed. Immediately after the bank active com-
mand, the DDR2 SDRAM can accept a read or write command (with or without Auto-Precharge) on the fol-
lowing clock cycle. If a R/W command is issued to a bank that has not satisfied the tRCDmin specification,
then additive latency must be programmed into the device to delay the R/W command which is internally
issued to the device. The additive latency value must be chosen to assure tRCDmin is satisfied. Additive
latencies of 0, 1, 2, 3 and 4 are supported. Once a bank has been activated it must be precharged before
another Bank Activate command can be applied to the same bank. The bank active and precharge times are
defined as tRAS and tRP, respectively. The minimum time interval between successive Bank Activate com-
mands to the same bank is determined (tRC). The minimum time interval between Bank Active commands, to
any other bank, is the Bank A to Bank B delay time (tRRD).
Bank Activate Command Cycle: tRCD = 3, AL = 2, tRP = 3, tRRD = 2
Address
Command
T0
T2
T1
T3
T4
Col. Addr.
Bank A
Row Addr.
Bank B
Col. Addr.
Bank B
Internal RAS-CAS delay tRCDmin.
Bank A to Bank B delay tRRD.
Activate
Bank B
Read A
Posted CAS
Activate
Bank A
Read B
Posted CAS
Read A
Begins
Row Addr.
Bank A
Addr.
Bank A
Precharge
Bank A
Addr.
Bank B
Precharge
Bank B
Row Addr.
Bank A
Activate
Bank A
tRP Row Precharge Time (Bank A)
tRC Row Cycle Time (Bank A)
Tn
Tn+1
Tn+2
Tn+3
ACT
RAS-RAS delay tRRD.
tRAS Row Active Time (Bank A)
additive latency AL=2
CK, CK
相关PDF资料 |
PDF描述 |
|---|---|
| V59C1512164QAUJ5I | 32M X 16 DDR DRAM, PBGA92 |
| V59C1512164QAUP19AH | 32M X 16 DDR DRAM, PBGA92 |
| V59C1512168QALP25E | 32M X 16 DDR DRAM, BGA92 |
| V59C1512168QAUF37I | 32M X 16 DDR DRAM, PBGA92 |
| V59C1512168QAUJ19H | 32M X 16 DDR DRAM, PBGA92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| V59C1512164QDJ25 | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 400MHz, Green Part 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 400MHz, Green Part |
| V59C1512164QDJ25A | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 800MHz, Green Part, CL6 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 800MHz, Green Part, CL6 |
| V59C1512164QDJ25I | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, |
| V59C1512164QDJ3 | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part |
| V59C1512164QDJ3I | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, |
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