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参数资料
| 型号： | V59C1512164QALP37I |
| 厂商： | PROMOS TECHNOLOGIES INC |
| 元件分类： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, PBGA92 |
| 封装： | GREEN, FBGA-92 |
| 文件页数： | 29/79页 |
| 文件大小： | 1028K |
| 代理商： | V59C1512164QALP37I |
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35
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
Burst Interruption
Interruption of a read or write burst is prohibited for burst length of 4 and only allowed for burst length of 8
under the following conditions:
1. A Read Burst of 8 can only be interrupted by another Read command. Read burst interruption by a Write or Precharge
Command is prohibited.
2. A Write Burst of 8 can only be interrupted by another Write command. Write burst interruption by a Read or Precharge
Command is prohibited.
3. Read burst interrupt must occur exactly two clocks after the previous Read command. Any other Read burst interrupt
timings are prohibited.
4. Write burst interrupt must occur exactly two clocks after the previous Write command. Any other Read burst interrupt
timings are prohibited.
5. Read or Write burst interruption is allowed to any bank inside the DDR2 SDRAM.
6. Read or Write burst with Auto-Precharge enabled is not allowed to be interrupted.
7. Read burst interruption is allowed by a Read with Auto-Precharge command.
8. Write burst interruption is allowed by a Write with Auto-Precharge command.
9. All command timings are referenced to burst length set in the mode register. They are not referenced to the actual
burst. For example, Minimum Read to Precharge timing is AL + BL/2 where BL is the burst length set in the mode reg-
ister and not the actual burst (which is shorter because of interrupt). Minimum Write to Precharge timing is WL + BL/ 2
+ tWR, where tWR starts with the rising clock after the un-interrupted burst end and not form the end of the actual burst
end.
Read Burst Interrupt Timing Example : (CL = 3, AL = 0, RL = 3, BL = 8)
NOP
READ A
T0
T2
T1
T3
T4
T5
T6
T7
T8
CMD
DQ
RBI
DQS,
DQS
READ B
NOP
Dout A0
Dout A1
Dout A2
Dout A3 Dout B0
Dout B1
Dout B2
Dout B3 Dout B4
Dout B5
Dout B6
Dout B
CK, CK
相关PDF资料 |
PDF描述 |
|---|---|
| V59C1512164QAUJ5I | 32M X 16 DDR DRAM, PBGA92 |
| V59C1512164QAUP19AH | 32M X 16 DDR DRAM, PBGA92 |
| V59C1512168QALP25E | 32M X 16 DDR DRAM, BGA92 |
| V59C1512168QAUF37I | 32M X 16 DDR DRAM, PBGA92 |
| V59C1512168QAUJ19H | 32M X 16 DDR DRAM, PBGA92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| V59C1512164QDJ25 | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 400MHz, Green Part 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 400MHz, Green Part |
| V59C1512164QDJ25A | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 800MHz, Green Part, CL6 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 800MHz, Green Part, CL6 |
| V59C1512164QDJ25I | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, |
| V59C1512164QDJ3 | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part |
| V59C1512164QDJ3I | 制造商:ProMOS 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, 制造商:ProMOS Technologies INC. 功能描述:32M*16 DDRII, 1.8V, BGA, 333MHz, Green Part, |
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