参数资料
型号: W25X20BLSNIG
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 2M X 1 FLASH 2.7V PROM, PDSO8
封装: 0.150 INCH, GREEN, PLASTIC, SOIC-8
文件页数: 21/53页
文件大小: 2041K
代理商: W25X20BLSNIG
W25X10BL/20BL/40BL
- 28 -
9.2.15
Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of
all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2).
The Sector Erase instruction sequence is shown in figure 15.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status
of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (TB, BP2, BP1,
and BP0) bits (see Status Register Memory Protection table).
Figure 15. Sector Erase Instruction Sequence Diagram
相关PDF资料
PDF描述
W25X20BLZPIG 2M X 1 FLASH 2.7V PROM, PDSO8
W25X32AVDAIZ 4M X 8 FLASH 2.7V PROM, PDIP8
W25X40-VSNI 4M X 1 FLASH 2.7V PROM, PDSO8
W25X80-VSNI-G 8M X 1 FLASH 2.7V PROM, PDSO8
W25X40BVDAIG 4M X 1 FLASH 2.7V PROM, PDIP8
相关代理商/技术参数
参数描述
W25X20BLZPIG 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI
W25X20BV 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI
W25X20BVSNIG 功能描述:IC SPI FLASH 2MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.173",4.40mm 宽) 供应商设备封装:8-MFP 包装:带卷 (TR)
W25X20BVZPIG 功能描述:IC SPI FLASH 2MBIT 8WSON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.173",4.40mm 宽) 供应商设备封装:8-MFP 包装:带卷 (TR)
W25X20CLSNIG 功能描述:IC FLASH SPI 2MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP(0.465",11.8mm 宽) 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8