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| 型号： | W25X20BLSNIG |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.150 INCH, GREEN, PLASTIC, SOIC-8 |
| 文件页数： | 3/53页 |
| 文件大小： | 2041K |
| 代理商： | W25X20BLSNIG |
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W25X10BL/20BL/40BL
Publication Release Date: October 14, 2009
- 11 -
Preliminary -- Revision A
9.
CONTROL AND STATUS REGISTERS
The Read Status Register instruction can be used to provide status on the availability of the Flash
memory array, if the device is write enabled or disabled, and the state of write protection. The Write
Status Register instruction can be used to configure the device write protection features. See Figure 3.
9.1
STATUS REGISTER
9.1.1
BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a
Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction. During this
time the device will ignore further instructions except for the Read Status Register instruction (see tW,
tPP, tSE, tBE, and tCE in AC Characteristics). When the program, erase or write status register
instruction has completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for
further instructions.
9.1.2
Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to a 1 after executing
a Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is write disabled. A
write disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Sector Erase, Block Erase, Chip Erase and Write Status Register.
9.1.3
Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, and BP0) are non-volatile read/write bits in the status register (S4,
S3, and S2) that provide Write Protection control and status. Block Protect bits can be set using the
Write Status Register Instruction (see tW in AC characteristics). All, none or a portion of the memory
array can be protected from Program and Erase instructions (see Status Register Memory Protection
table). The factory default setting for the Block Protection Bits is 0, none of the array protected. The
Block Protect bits cannot be written to if the Status Register Protect (SRP) bit is set to 1 and the Write
Protect (/WP) pin is low.
9.1.4
Top/Bottom Block Protect (TB)
The Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB=0)
or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table. The TB bit
is non-volatile and the factory default setting is TB=0. The TB bit can be set with the Write Status
Register Instruction provided that the Write Enable instruction has been issued. The TB bit cannot be
written to if the Status Register Protect (SRP) bit is set to 1 and the Write Protect (/WP) pin is low.
9.1.5
Reserved Bits
Status register bit location S6 is reserved for future use. Current devices will read 0 for this bit location.
It is recommended to mask out the reserved bit when testing the Status Register. Doing this will ensure
compatibility with future devices.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W25X20BLZPIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
| W25X20BV | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI |
| W25X20BVSNIG | 功能描述:IC SPI FLASH 2MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W25X20BVZPIG | 功能描述:IC SPI FLASH 2MBIT 8WSON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W25X20CLSNIG | 功能描述:IC FLASH SPI 2MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
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