参数资料
型号: W947D6HBHX5E
厂商: Winbond Electronics
文件页数: 22/60页
文件大小: 0K
描述: IC LPDDR SDRAM 128MBIT 60VFBGA
标准包装: 312
格式 - 存储器: RAM
存储器类型: 移动 LPDDR SDRAM
存储容量: 128M(8Mx16)
速度: 200MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -25°C ~ 85°C
封装/外壳: 60-TFBGA
供应商设备封装: 60-VFBGA(8x9)
包装: 托盘
W947D6HB / W947D2HB
128Mb Mobile LPDDR
6.11.5 Truth Table - Current State BANKn - Command to BANKn
CURRENT STATE
CS
RAS
CAS WE
COMMAND
ACTION
NOTES
Any
H
L
L
X
H
L
X
H
H
X
H
H
DESELECT
No Operation
ACTIVE
NOP or Continue previous operation
NOP or Continue previous operation
Select and activate row
Idle
Row Active
Read (Auto precharge
Disabled)
Write (Auto precharge
Disabled)
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
L
H
H
L
H
H
H
L
L
L
L
L
H
L
L
H
H
L
L
H
H
L
H
L
L
H
L
L
L
H
L
L
AUTO REFRESH
MRS
READ
WRITE
PRECHARGE
READ
WRITE
PRECHARGE
BURST
TERMINATE
READ
WRITE
PRECHARGE
Auto refresh
Mode register set
Select column & start read burst
Select column & start write burst
Deactivate row in bank (or banks)
Select column & start new read burst
Select column & start write burst
Truncate read burst, start precharge
Burst terminate
Select column & start read burst
Select column & start new write burst
Truncate write burst & start precharge
10
10
4
5, 6
5, 6, 13
11
5, 6, 12
5, 6
12
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
The table applies when both CKEn-1 and CKEn are HIGH, and after tXSR or tXP has been met if the previous state was
Self Refresh or Power Down.
DESELECT and NOP are functionally interchangeable.
All states and sequences not shown are illegal or reserved.
This command may or may not be bank specific. If all banks are being precharged, they must be in a valid state for
precharging.
A command other than NOP should not be issued to the same bank while a READ or WRITE burst with Auto Precharge is
enabled.
The new Read or Write command could be Auto Prechrge enabled or Auto Precharge disabled.
Current State Definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register
accesses are in progress.
Read: A READ burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
The following states must not be interrupted by a command issued to the same bank. DESEDECT or NOP commands or
allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable
commands to the other bank are determined by its current state and this table, and according to next table.
Precharging: Starts with the registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the
bank will be in the idle state.
Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the bank
will be in the ?row active? state.
Read with AP Enabled: Starts with the registration of the READ command with Auto Precharge enabled and ends when tRP
has been met. Once tRP has been met, the bank will be in the idle state.
Write with AP Enabled: Starts with registration of a WRITE command with Auto Precharge enabled and ends when tRP has
been met. Once tRP is met, the bank will be in the idle state.
The following states must not be interrupted by any executable command; DESEDECT or NOP commands must be applied
to each positive clock edge during these states.
Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRFC is met. Once tRFC is met, the
LPDDR will be in an ?all banks idle? state.
Publication Release Date:Jun,17, 2011
- 22 -
Revision A01-003
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W947D6HBHX5I 制造商:WINBOND 制造商全称:Winbond 功能描述:128Mb Mobile LPDDR
W947D6HBHX5I TR 制造商:Winbond Electronics Corp 功能描述:
W947D6HBHX6E 制造商:Winbond Electronics Corp 功能描述:IC LPDDR SDRAM 128MBIT 60VFBGA
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