参数资料
型号: W947D6HBHX5E
厂商: Winbond Electronics
文件页数: 31/60页
文件大小: 0K
描述: IC LPDDR SDRAM 128MBIT 60VFBGA
标准包装: 312
格式 - 存储器: RAM
存储器类型: 移动 LPDDR SDRAM
存储容量: 128M(8Mx16)
速度: 200MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -25°C ~ 85°C
封装/外壳: 60-TFBGA
供应商设备封装: 60-VFBGA(8x9)
包装: 托盘
W947D6HB / W947D2HB
128Mb Mobile LPDDR
7.5.7 Random Read Bursts
Full-speed random read accesses within a page or pages can be performed as shown in following figure.
CK
CK
Command
Address
READ
BA,Col n
READ
BA,Col x
READ
BA,Col b
READ
BA,Col g
NOP
NOP
CL=2
DQS
DQ
DO n
DO n I
DO x
DO x I
DO b
DO b I
DO g
DO g I
CL=3
DQS
DQ
DO n
DO n I
DO x
DO x I
DO b
DO b I
1) DO n ,etc. = Data Out from column n, etc.
n I , x I , etc. = Data Out elements, according to the programmed burst order
2) BA, Col n = Bank A, Column n
3) Burst Length=2,4,8 or 16 in cases shown (if burst of 4,8 or 16, the burst is interrupted)
4) Reads are to active rows in any banks
7.5.8 Read Burst Terminate
= Don't Care
Data from any READ burst may be truncated with a BURST TERMINATE
command, as shown in figure. The
BURST TERMINATE latency is equal to the read (CAS) latency, i.e., the BURST TERMINATE command should be
issued X cycles after the READ command where X equals the desired data-out element pairs.
CK
CK
Command
READ
BST
NOP
NOP
NOP
NOP
Address
BA,Col n
CL=2
DQS
DQ
CL=3
DQS
DQ
1) DO n = Data Out from column n
= Don't Care
2) BA,Col n = Bank A, Column n
3) Cases shown are bursts of 4,8 or 16 terminated after 2 data elements.
4) Shown with nominal tAC, tDQSCK and tDQSQ
Publication Release Date:Jun,17, 2011
- 31 -
Revision A01-003
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W947D6HBHX5I 制造商:WINBOND 制造商全称:Winbond 功能描述:128Mb Mobile LPDDR
W947D6HBHX5I TR 制造商:Winbond Electronics Corp 功能描述:
W947D6HBHX6E 制造商:Winbond Electronics Corp 功能描述:IC LPDDR SDRAM 128MBIT 60VFBGA
W947D6HBHX6G 制造商:WINBOND 制造商全称:Winbond 功能描述:128Mb Mobile LPDDR
W948D2FB 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPDDR