参数资料
型号: W949D2CBJX5E
厂商: Winbond Electronics
文件页数: 19/60页
文件大小: 0K
描述: IC LPDDR SDRAM 512MBIT 90VFBGA
标准包装: 240
格式 - 存储器: RAM
存储器类型: 移动 LPDDR SDRAM
存储容量: 512M(16M x 32)
速度: 200MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -25°C ~ 85°C
封装/外壳: 90-TFBGA
供应商设备封装: 90-VFBGA(8x13)
包装: 托盘
W949D6CB / W949D2CB
512Mb Mobile LPDDR
6.8 Partial Array Self Refresh
With partial array self refresh (PASR), the self refresh may be restricted to a variable portion of the total array. The
whole array (default), 1/2 array, or 1/4 array could be selected. Data outside the defined area will be lost. Address
bits A0 to A2 are used to set PASR.
6.9 Automatic Temperature Compensated Self Refresh
The device has an Automatic Temperature Compensated Self Refresh feature. It automatically adjusts the refresh
rate based on the device temperature without any register update needed. To maintain backward compatibility, this
device which have Automatic TCSR, ignore (don?t care) the inputs to address bits A3 and A4 during EMRS
programming.
6.10 Output Drive Strength
The drive strength could be set to full, half or three-quarter strength via address bits A5 and A6. The half drive
strength option is intended for lighter loads or point-to-point environments.
6.11 Commands
All commands (address and control signals) are registered on the positive edge of clock (crossing of CK going high
and CK going low).
6.11.1 Basic Timing Parameters for Commands
CK
t CK
t CH
t CL
CK
t IS
t IH
Input
Valid
Valid
Valid
NOTE: Input = A0 – An, BA0, BA1, CKE, CS, RAS, CAS, WE;
- 19 -
: Don't Care
Publication Release Date: Sep, 21, 2011
Revision A01-007
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