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参数资料
| 型号： | W949D2CBJX5E |
| 厂商： | Winbond Electronics |
| 文件页数： | 23/60页 |
| 文件大小： | 0K |
| 描述： | IC LPDDR SDRAM 512MBIT 90VFBGA |
| 标准包装： | 240 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 LPDDR SDRAM |
| 存储容量： | 512M（16M x 32） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | 90-TFBGA |
| 供应商设备封装： | 90-VFBGA（8x13） |
| 包装： | 托盘 |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
Accessing Mode Register: Starts with registration of a MODE REGISTER SET command and ends when tMRD has been
met. Once tMRD is met, the LPDDR SDRAM will be in an ?all banks idle? state.
Precharging All: Starts with the registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is met,
the bank will be in the idle state.
10.
11.
12.
13.
Not bank-specific; requires that all banks are idle and no bursts are in progress.
Not bank-specific. BURST TERMINATE affects the most recent READ burst, regardless of bank.
Requires appropriate DM masking.
A WRITE command may be applied after the completion of the READ burst; otherwise, a BURST TERMINATE must be
used to end the READ prior to asserting a WRITE command.
6.11.6 Truth Table - Current State BANKn, Command to BANKn
CURRENT
STATE
Any
Idle
Row Activating,
Active, or
Precharging
Read with Auto
Precharge
disabled
Write with Auto
Precharge
disabled
Read with Auto
Precharge
Write with Auto
Precharge
CS
H
L
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
RAS
X
H
X
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
CAS
X
H
X
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
WE
X
H
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
COMMAND
DESELECT
NOP
ANY
ACTIVE
READ
WRITE
PRECHARGE
ACTIVE
READ
WRITE
PRECHARGE
ACTIVE
READ
WRITE
PRECHARGE
ACTIVE
READ
WRITE
PRECHARGE
ACTIVE
READ
WRITE
PRECHARGE
ACTION
NOP or Continue previous Operation
NOP or Continue previous Operation
Any command allowed to bank m
Select and activate row
Select column & start read burst
Select column & start write burst
Precharge
Select and activate row
Select column & start new read burst
Select column & start write burst
Precharge
Select and activate row
Select column & start read burst
Select column & start new write burst
Precharge
Select and activate row
Select column & start new read burst
Select column & start write burst
Precharge
Select and activate row
Select column & start read burst
Select column & start new write burst
Precharge
NOTES
8
8
8
8,10
8, 9
8
5, 8
5, 8, 10
5, 8
5, 8
Publication Release Date: Sep, 21, 2011
- 23 -
Revision A01-007
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
| W949D2CBJX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM |
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