- 您现在的位置：买卖IC网 > Datasheet目录369 > W949D2CBJX5E (Winbond Electronics)IC LPDDR SDRAM 512MBIT 90VFBGA Datasheet资料下载
参数资料
| 型号： | W949D2CBJX5E |
| 厂商： | Winbond Electronics |
| 文件页数： | 33/60页 |
| 文件大小： | 0K |
| 描述： | IC LPDDR SDRAM 512MBIT 90VFBGA |
| 标准包装： | 240 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 LPDDR SDRAM |
| 存储容量： | 512M（16M x 32） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | 90-TFBGA |
| 供应商设备封装： | 90-VFBGA（8x13） |
| 包装： | 托盘 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页当前第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页
W949D6CB / W949D2CB
512Mb Mobile LPDDR
CK
CK
Command
READ
NOP
PRE
NOP
NOP
NOP
Address
BA,Col n
CL=2
Bank
(a or all)
t RP
BA,Row
DQS
DQ
DO n
CL=3
DQS
DQ
1) DO n=Data Out from column n
DO n
= Don't Care
2) Cases shown are either uninterrupted of 4, or interrupted bursts of 8 or 16
3) Shown with nominal tAC,tDQSCK and tDQSQ
4) Precharge may be applied at (BL/2) tCK after the READ command.
5) Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks.
6) The ACTIVE command may be applied if tRC has been met.
7.5.11 Burst Terminate of Read
The BURST TERMINATE command is used to truncate read bursts (with Auto Pre-charge disabled). The most
recently registered READ command prior to the BURST TERMINATE command will be truncated. Note that the
BURST TERMINATE command is not bank specific.
This command should not be used to terminate write bursts.
CK
CK
CKE
(High)
CS
RAS
CAS
WE
A0-An
BA0,BA1
= Don't Care
7.6 Write
The WRITE command is used to initiate a burst write access to an active row, with a burst length as set in the Mode
Register. BA0 and BA1 select the bank, and the address inputs select the starting column location. The value of A10
determines whether or not Auto Pre-charge is used. If Auto Pre-charge is selected, the row being accessed will be
pre-charged at the end of the write burst; if Auto Pre-charge is not selected, the row will remain open for subsequent
accesses.
Publication Release Date: Sep, 21, 2011
- 33 -
Revision A01-007
相关PDF资料 |
PDF描述 |
|---|---|
| W971GG6JB25I | IC DDR2 SDRAM 1GBIT 84WBGA |
| W971GG8JB-25 | IC DDR2 SDRAM 1GBIT 60WBGA |
| W9725G6IB-25 | IC DDR2-800 SDRAM 256MB 84-WBGA |
| W9725G6JB25I | IC DDR2 SDRAM 256MBIT 84WBGA |
| W9725G6KB-25I | IC DDR2 SDRAM 256MBIT 84WBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
| W949D2CBJX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM |
发布紧急采购，3分钟左右您将得到回复。