- 您现在的位置：买卖IC网 > Datasheet目录369 > W949D2CBJX5E (Winbond Electronics)IC LPDDR SDRAM 512MBIT 90VFBGA Datasheet资料下载
参数资料
| 型号： | W949D2CBJX5E |
| 厂商： | Winbond Electronics |
| 文件页数： | 4/60页 |
| 文件大小： | 0K |
| 描述： | IC LPDDR SDRAM 512MBIT 90VFBGA |
| 标准包装： | 240 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 LPDDR SDRAM |
| 存储容量： | 512M（16M x 32） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | 90-TFBGA |
| 供应商设备封装： | 90-VFBGA（8x13） |
| 包装： | 托盘 |
第1页第2页第3页当前第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页
W949D6CB / W949D2CB
512Mb Mobile LPDDR
1. GENERAL DESCRIPTION
W949D6CB / W949D2CB is a high-speed Low Power double data rate synchronous dynamic random access
memory (LPDDR SDRAM), An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one
page can be accessed at a burst length of 2, 4, 8 and 16 when a bank and row is selected by an ACTIVE command.
Column addresses are automatically generated by the LPDDR SDRAM internal counter in burst operation. Random
column read is also possible by providing its address at each clock cycle. The multiple bank nature enables
interleaving among internal banks to hide the pre-charging time. By setting programmable Mode Registers, the
system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. The
device supports low power functions such as Partial Array Self Refresh (PASR) and Automatic Temperature
Compensated Self Refresh (ATCSR).
2. FEATURES
VDD = 1.7~1.95V
VDDQ = 1.7~1.95V;
Data width: x16 / x32
Clock rate: 200MHz(-5),166MHz (-6) ,133MHz (-75)
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self-Refresh(ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Programmable output buffer driver strength
Four internal banks for concurrent operation
Data mask (DM) for write data
CAS Latency: 2 and 3
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
64 ms Refresh period
Interface: LVCMOS compatible
Support package:
60 balls BGA (x16)
90 balls BGA (x32)
Operating Temperature Range :
Extended (-25 ° C ~ +85 ° C)
Industrial (-40 ° C ~ +85 ° C)
Clock Stop capability during idle periods
Auto Pre-charge option for each burst access
Double data rate for data output
Differential clock inputs (CK and CK )
Bidirectional, data strobe (DQS)
Publication Release Date: Sep, 21, 2011
-4-
Revision A01-007
相关PDF资料 |
PDF描述 |
|---|---|
| W971GG6JB25I | IC DDR2 SDRAM 1GBIT 84WBGA |
| W971GG8JB-25 | IC DDR2 SDRAM 1GBIT 60WBGA |
| W9725G6IB-25 | IC DDR2-800 SDRAM 256MB 84-WBGA |
| W9725G6JB25I | IC DDR2 SDRAM 256MBIT 84WBGA |
| W9725G6KB-25I | IC DDR2 SDRAM 256MBIT 84WBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
| W949D2CBJX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM |
发布紧急采购，3分钟左右您将得到回复。