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| 型号： | W9712G6JB-3 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 0.45 ns, PBGA84 |
| 封装： | 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84 |
| 文件页数： | 12/86页 |
| 文件大小： | 1027K |
| 代理商： | W9712G6JB-3 |
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W9712G6JB
Publication Release Date: Mar. 15, 2010
- 2 -
Revision A01
7.4.2
Burst mode operation.......................................................................................................24
7.4.3
Burst read mode operation...............................................................................................25
7.4.4
Burst write mode operation ..............................................................................................25
7.4.5
Write data mask ...............................................................................................................26
7.5
Burst Interrupt .....................................................................................................................................26
7.6
Precharge operation............................................................................................................................27
7.6.1
Burst read operation followed by precharge.....................................................................27
7.6.2
Burst write operation followed by precharge ....................................................................27
7.7
Auto-precharge operation ...................................................................................................................27
7.7.1
Burst read with Auto-precharge........................................................................................28
7.7.2
Burst write with Auto-precharge .......................................................................................28
7.8
Refresh Operation...............................................................................................................................29
7.9
Power Down Mode..............................................................................................................................29
7.9.1
Power Down Entry ...........................................................................................................30
7.9.2
Power Down Exit..............................................................................................................30
7.10
Input clock frequency change during precharge power down .............................................................30
8.
OPERATION MODE ...........................................................................................................................31
8.1
Command Truth Table ........................................................................................................................31
8.2
Clock Enable (CKE) Truth Table for Synchronous Transitions............................................................32
8.3
Data Mask (DM) Truth Table...............................................................................................................32
8.4
Function Truth Table ...........................................................................................................................33
8.5
Simplified Stated Diagram...................................................................................................................36
9.
ELECTRICAL CHARACTERISTICS ...................................................................................................37
9.1
Absolute Maximum Ratings.................................................................................................................37
9.2
Operating Temperature Condition.......................................................................................................37
9.3
Recommended DC Operating Conditions ...........................................................................................37
9.4
ODT DC Electrical Characteristics ......................................................................................................38
9.5
Input DC Logic Level...........................................................................................................................38
9.6
Input AC Logic Level ...........................................................................................................................38
9.7
Capacitance ........................................................................................................................................39
9.8
Leakage and Output Buffer Characteristics ........................................................................................39
4.1
DC Characteristics ..............................................................................................................................40
9.9
IDD Measurement Test Parameters....................................................................................................42
9.10
AC Characteristics ..............................................................................................................................43
9.10.1
AC Characteristics and Operating Condition for -18 speed grade ...................................43
9.10.2
AC Characteristics and Operating Condition for -25/25I/25A/-3 speed grade ..................45
9.12
AC Input Test Conditions ....................................................................................................................65
9.13
Differential Input/Output AC Logic Levels ...........................................................................................65
9.14
AC Overshoot / Undershoot Specification...........................................................................................66
9.14.1
AC Overshoot / Undershoot Specification for Address and Control Pins: ........................66
9.14.2
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins:..........66
10.
TIMING WAVEFORMS .......................................................................................................................67
10.1
Command Input Timing.......................................................................................................................67
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9712G6KB-25 | 制造商:Winbond Electronics Corp 功能描述:128M DDR2-800, X16 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9712G6KB25I | 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9712G8JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M × 4 BANKS × 8 BIT DDR2 SDRAM |
| W9712G8JB25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 128M-Bit 16Mx8 1.8V 60-Pin WBGA |
| W9712G8JB25I | 制造商:Winbond Electronics Corp 功能描述:128M DDR2-800, X8, IND TEMP |
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