参数资料
型号: W9712G6JB-3
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 8M X 16 DDR DRAM, 0.45 ns, PBGA84
封装: 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84
文件页数: 63/86页
文件大小: 1027K
代理商: W9712G6JB-3
W9712G6JB
Publication Release Date: Mar. 15, 2010
- 66 -
Revision A01
9.14 AC Overshoot / Undershoot Specification
9.14.1 AC Overshoot / Undershoot Specification for Address and Control Pins:
Applies to A0-A11, BA0-BA1, /CS, /RAS, /CAS, /WE, CKE, ODT
PARAMETER
18
25/25I/25A
3
UNIT
Maximum peak amplitude allowed for overshoot area
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
V
Maximum overshoot area above VDD
0.5
0.66
0.8
V-nS
Maximum undershoot area below VSS
0.5
0.66
0.8
V-nS
9.14.2 AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask pins:
Applies to DQ, LDQS, /LDQS, UDQS, /UDQS, LDM, UDM, CLK, /CLK
PARAMETER
18
25/25I/25A
3
UNIT
Maximum peak amplitude allowed for overshoot area
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
V
Maximum overshoot area above VDDQ
0.19
0.23
V-nS
Maximum undershoot area below VSSQ
0.19
0.23
V-nS
Maximum Amplitude
Overshoot Area
Undershoot Area
VDD/VDDQ
Volts (V)
Time (nS)
VSS/VSSQ
Figure 29—AC overshoot and undershoot definition
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W9712G6KB-25 制造商:Winbond Electronics Corp 功能描述:128M DDR2-800, X16 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
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W9712G8JB25 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 128M-Bit 16Mx8 1.8V 60-Pin WBGA
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