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参数资料
| 型号： | W9712G6JB-3 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 0.45 ns, PBGA84 |
| 封装： | 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84 |
| 文件页数： | 29/86页 |
| 文件大小： | 1027K |
| 代理商： | W9712G6JB-3 |
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W9712G6JB
Publication Release Date: Mar. 15, 2010
- 35 -
Revision A01
Function Truth Table, continued
CURRENT
STATE
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
DSL
NOP-> Bank active after tWR
L
H
X
NOP
NOP-> Bank active after tWR
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
1
L
H
L
BA, CA, A10
WRIT/WRITA
New write
L
H
BA, RA
ACT
ILLEGAL
1
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
H
X
AREF/SELF
ILLEGAL
Write
Recovering
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP-> Precharge after tWR
L
H
X
NOP
NOP-> Precharge after tWR
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
1
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
1
L
H
BA, RA
ACT
ILLEGAL
1
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
H
X
AREF/SELF
ILLEGAL
Write
Recovering
with Auto-
precharge
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP-> Idle after tRC
L
H
X
NOP
NOP-> Idle after tRC
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
H
X
AREF/SELF
ILLEGAL
Refreshing
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP-> Idle after tMRD
L
H
X
NOP
NOP-> Idle after tMRD
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
H
X
AREF/SELF
ILLEGAL
Mode
Register
Accessing
L
Op-Code
MRS/EMRS
ILLEGAL
Notes:
1. This command may be issued for other banks, depending on the state of the banks.
2. All banks must be in "IDLE".
3. Read or Write burst interruption is prohibited for burst length of 4 and only allowed for burst length of 8. Burst read/write can
only be interrupted by another read/write with 4 bit burst boundary. Any other case of read/write interrupt is not allowed.
Remark: H = High level, L = Low level, X = High or Low level (Don’t Care), V = Valid data.
相关PDF资料 |
PDF描述 |
|---|---|
| W981616CH-5 | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 |
| W986408AH-10 | 8M X 8 SYNCHRONOUS DRAM, 8 ns, PDSO54 |
| W986408BH-8N | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| W986416BH-7 | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| WC320240A-AF | WC320240A-FCI-N |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9712G6KB-25 | 制造商:Winbond Electronics Corp 功能描述:128M DDR2-800, X16 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9712G6KB25I | 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9712G8JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M × 4 BANKS × 8 BIT DDR2 SDRAM |
| W9712G8JB25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 128M-Bit 16Mx8 1.8V 60-Pin WBGA |
| W9712G8JB25I | 制造商:Winbond Electronics Corp 功能描述:128M DDR2-800, X8, IND TEMP |
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