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| 型号： | W9712G6JB-3 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 0.45 ns, PBGA84 |
| 封装： | 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84 |
| 文件页数： | 5/86页 |
| 文件大小： | 1027K |
| 代理商： | W9712G6JB-3 |
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W9712G6JB
Publication Release Date: Mar. 15, 2010
- 13 -
Revision A01
7.2.2.3
Extend Mode Register Set Command (2), EMR (2)
( CS = "L", RAS = "L", CAS = "L", WE = "L", BA0 = "L", BA1 = "H", A0 to A11 = Register data)
The extended mode register (2) controls refresh related features. The default value of the extended
mode register (2) is not defined, therefore the extended mode register (2) must be programmed during
initialization for proper operation.
The DDR2 SDRAM should be in all bank precharge state with CKE already high prior to writing into
the extended mode register (2). The mode register set command cycle time (tMRD) must be satisfied to
complete the write operation to the extended mode register (2). Mode register contents can be
changed using the same command and clock cycle requirements during normal operation as long as
all banks are in the precharge state.
A12
A11
A10
A9
A8
A7A6
A5A4
A3A2
A1
A0
0
SELF
0*1
Address Field
Extended Mode Register (2)
0*1
A7
1
0
Disable
High Temperature Self Refresh Rate Enable
Enable*2
BA0
1
BA1 BA0
MRS mode
0
1
11
MRS
EMR (1)
EMR (2)
EMR (3)
BA1
Notes:
1. The rest bits in EMR (2) is reserved for future use and all bits in EMR (2) except A7, BA0 and BA1 must be programmed to 0
when setting the extended mode register (2) during initialization.
2. When DRAM is operated at 85 °C < TCASE ≤ 95 °C the extended Self Refresh rate must be enabled by setting bit A7 to "1"
before the Self Refresh mode can be entered.
Figure 4—EMR (2)
相关PDF资料 |
PDF描述 |
|---|---|
| W981616CH-5 | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 |
| W986408AH-10 | 8M X 8 SYNCHRONOUS DRAM, 8 ns, PDSO54 |
| W986408BH-8N | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| W986416BH-7 | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| WC320240A-AF | WC320240A-FCI-N |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9712G6KB-25 | 制造商:Winbond Electronics Corp 功能描述:128M DDR2-800, X16 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9712G6KB25I | 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9712G8JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M × 4 BANKS × 8 BIT DDR2 SDRAM |
| W9712G8JB25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 128M-Bit 16Mx8 1.8V 60-Pin WBGA |
| W9712G8JB25I | 制造商:Winbond Electronics Corp 功能描述:128M DDR2-800, X8, IND TEMP |
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