参数资料
型号: W9712G6JB-3
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 8M X 16 DDR DRAM, 0.45 ns, PBGA84
封装: 12.50 X 8 MM, ROHS COMPLIANT, WBGA-84
文件页数: 74/86页
文件大小: 1027K
代理商: W9712G6JB-3
W9712G6JB
Publication Release Date: Mar. 15, 2010
- 76 -
Revision A01
10.16 Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=4, tRTP
≤ 2clks)
Precharge
NOP
Bank A
Activate
NOP
Post CAS
READ A
NOP
T0
T1
T2
T3
T4
T5
T6
T7
CLK/CLK
CMD
DQS,
DQS
T8
≥ tRAS
≥ tRTP
AL+BL/2 clks
≥ tRP
AL = 1
CL = 3
RL = 4
NOP
Dout
A0
Dout
A1
Dout
A2
Dout
A3
DQ's
10.17 Burst read operation followed by precharge: RL=4 (AL=1, CL=3, BL=8, tRTP
≤ 2clks)
NOP
Precharge
NOP
Post CAS
READ A
T0
T1
T2
T3
T4
T5
T6
T7
T8
≥ tRTP
AL + BL/2 clks
AL = 1
CL = 3
RL = 4
Dout
A0
Dout
A1
Dout
A2
Dout
A3
Dout
A4
Dout
A5
Dout
A6
Dout
A7
first 4-bit prefetch
second 4-bit prefetch
CLK/CLK
CMD
DQS,
DQS
DQ's
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