- 您现在的位置：买卖IC网 > PDF目录68559 > W972GG8JB-25I (WINBOND ELECTRONICS CORP) 256M X 8 DDR DRAM, 0.4 ns, PBGA60 PDF资料下载
参数资料
| 型号： | W972GG8JB-25I |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 256M X 8 DDR DRAM, 0.4 ns, PBGA60 |
| 封装： | 11 X 11.50 MM, ROHS COMPLIANT, WBGA-60 |
| 文件页数： | 31/86页 |
| 文件大小： | 1466K |
| 代理商： | W972GG8JB-25I |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页当前第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页
W972GG8JB
Publication Release Date: Feb. 18, 2011
- 37 -
Revision A02
9.
ELECTRICAL CHARACTERISTICS
9.1
Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
NOTES
Voltage on VDD pin relative to VSS
VDD
-1.0 ~ 2.3
V
1, 2
Voltage on VDDQ pin relative to VSS
VDDQ
-0.5 ~ 2.3
V
1, 2
Voltage on VDDL pin relative to VSS
VDDL
-0.5 ~ 2.3
V
1, 2
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 2.3
V
1, 2
Storage Temperature
TSTG
-55 ~ 100
°C
1, 2, 3
Notes:
1. Stresses gr
eater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. When VDD and VDDQ and VDDL are less than 500mV; VREF may be equal to or less than 300mV.
3. Storage temperature is the case surface temperature on the center/top side of the DRAM.
9.2
Operating Temperature Condition
PARAMETER
SYMBOL
RATING
UNIT
NOTES
Operating Temperature (for -18/-25/-3)
TOPR
0 ~ 85
°C
1, 2, 3
Operating Temperature (for 25I)
TOPR
-40 ~ 95
°C
1, 2, 3, 4
Notes:
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0 ~ 85°C with full JEDEC AC and DC specifications.
3. Supporting 0 ~ 85°C and being able to extend to 95°C with doubling Auto Refresh commands in frequency to a 32 mS period
( tREFI = 3.9 S), the High Temperature Self Refresh has to be enabled by setting EMR (2) bit A7 to 1. When the High
Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%.
4. During operation, the DRAM case temperature must be maintained between -40 to 95°C for Industrial parts under all
specification parameters.
9.3
Recommended DC Operating Conditions
SYM.
PARAMETER
MIN.
TYP.
MAX.
UNIT
NOTES
VDD
Supply Voltage
1.7
1.8
1.9
V
1
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
5
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
1, 5
VREF
Input Reference Voltage
0.49 x VDDQ
0.5 x VDDQ
0.51 x VDDQ
V
2, 3
VTT
Termination Voltage (System)
VREF - 0.04
VREF
VREF + 0.04
V
4
Notes:
1. There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However under all conditions VDDQ
must than or equal to VDD.
2. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF
is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
3. Peak to peak AC noise on VREF may not exceed
±2 % VREF(dc).
4. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and device must track VREF of receiving device.
5. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied together.
相关PDF资料 |
PDF描述 |
|---|---|
| W972GG8JB-18 | 256M X 8 DDR DRAM, 0.35 ns, PBGA60 |
| W9751G6JB-18 | 32M X 16 DDR DRAM, 0.35 ns, PBGA84 |
| W981204AH-8H | 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| W981216BH75L | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| W981216BH-75 | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W972GG8JB-3 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin WBGA 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 3NS |
| W9751G6IB-25 | 功能描述:IC DDR2-800 SDRAM 512MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W9751G6JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM |
| W9751G6JB-25 | 制造商:Winbond Electronics Corp 功能描述:512GB DDRII |
| W9751G6JB-3 | 制造商:Winbond Electronics Corp 功能描述:512MB DDRII |
发布紧急采购，3分钟左右您将得到回复。