参数资料
型号: W972GG8JB-25I
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 256M X 8 DDR DRAM, 0.4 ns, PBGA60
封装: 11 X 11.50 MM, ROHS COMPLIANT, WBGA-60
文件页数: 48/86页
文件大小: 1466K
代理商: W972GG8JB-25I
W972GG8JB
Publication Release Date: Feb. 18, 2011
- 52 -
Revision A02
-
tJIT(duty)
tJIT(duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of any single tCH from
tCH(avg). tCL jitter is the largest deviation of any single tCL from tCL(avg).
tJIT(duty) = Min/max of {tJIT(CH), tJIT(CL)}
where,
tJIT(CH) = {tCHi- tCH(avg) where i=1 to 200}
tJIT(CL) = {tCLi- tCL(avg) where i=1 to 200}
-
tJIT(per), tJIT(per,lck)
tJIT(per) is defined as the largest deviation of any single tCK from tCK(avg).
tJIT(per) = Min/max of {tCKi- tCK(avg) where i=1 to 200}
tJIT(per) defines the single period jitter when the DLL is already locked.
tJIT(per,lck) uses the same definition for single period jitter, during the DLL locking period only.
tJIT(per) and tJIT(per,lck) are not guaranteed through final production testing.
-
tJIT(cc), tJIT(cc,lck)
tJIT(cc) is defined as the difference in clock period between two consecutive clock cycles:
tJIT(cc) = Max of |tCKi+1
– tCKi|
tJIT(cc) defines the cycle to cycle jitter when the DLL is already locked.
tJIT(cc,lck) uses the same definition for cycle to cycle jitter, during the DLL locking period only.
tJIT(cc) and tJIT(cc,lck) are not guaranteed through final production testing.
-
tERR(2per), tERR (3per), tERR (4per), tERR (5per), tERR (6-10per) and tERR (11-50per)
tERR is defined as the cumulative error across multiple consecutive cycles from tCK(avg).
tERR(nper) =
1
n
i
j
tCK
–n × tCK(avg)
Where
50per)
R(11
for
tER
50
n
11
10per)
R(6
for
tER
10
n
6
R(5per)
for
tER
5
=
n
R(4per)
for
tER
4
=
n
R(3per)
for
tER
3
=
n
R(2per)
for
tER
2
=
n
相关PDF资料
PDF描述
W972GG8JB-18 256M X 8 DDR DRAM, 0.35 ns, PBGA60
W9751G6JB-18 32M X 16 DDR DRAM, 0.35 ns, PBGA84
W981204AH-8H 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
W981216BH75L 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
W981216BH-75 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
相关代理商/技术参数
参数描述
W972GG8JB-3 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin WBGA 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 2GBIT 3NS
W9751G6IB-25 功能描述:IC DDR2-800 SDRAM 512MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.173",4.40mm 宽) 供应商设备封装:8-MFP 包装:带卷 (TR)
W9751G6JB 制造商:WINBOND 制造商全称:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM
W9751G6JB-25 制造商:Winbond Electronics Corp 功能描述:512GB DDRII
W9751G6JB-3 制造商:Winbond Electronics Corp 功能描述:512MB DDRII