参数资料
型号: W989D6CBGX7E
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 32M X 16 DDR DRAM, 5.4 ns, PBGA54
封装: 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-54
文件页数: 16/67页
文件大小: 1469K
代理商: W989D6CBGX7E
W989D6CB / W989D2CB
512Mb Mobile LPSDR
Publication Release Date: Jun, 27, 2011
- 23 -
Revision A01-004
8.3.3 READ with auto precharge interrupted by a WRITE (with or without auto precharge)
A WRITE to bank m will interrupt a READ on bank n when registered. DQM should be used two clocks prior to the WRITE
command to prevent bus contention. The precharge to bank n begins when the WRITE to bank m is registered.
CLK
T0
T1
T2
T3
T4
T5
T6
T7
Command
Bank n
Bank m
Address
Internal
states
NOP
Idle
Bank n,
Col a
Bank m,
Col d
tWR-bank m
Write-back
tRP-bank n
WRITE-AP
Bank m
WRITE with burst of 4
Interrupt burst, precharge
READ with burst of 4
Page
active
Page active
READ-AP
Bank n
DOUT
a
Don’t Care
DQM
DQ
1
CL=3 (bank n)
Note: 1. DQM is HIGH at T2 to prevent DOUTa + 1 from contending with DINd at T4.
Din
d
Din
d+1
Din
d+2
Din
d+3
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