参数资料
型号: W989D6CBGX7E
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 32M X 16 DDR DRAM, 5.4 ns, PBGA54
封装: 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-54
文件页数: 54/67页
文件大小: 1469K
代理商: W989D6CBGX7E
W989D6CB / W989D2CB
512Mb Mobile LPSDR
Publication Release Date: Jun, 27, 2011
- 58 -
Revision A01-004
10.18 Auto Precharge Timing (Write Cycle)
0
1
3
2
(1) burst length = 1
DQ
4
5
7
6
8
9
11
10
Write
D0
Act
AP
Command
(2) burst length = 2
DQ
Write
D0
Act
AP
Command
tRP
D1
(3) burst length = 4
DQ
Write
D0
Act
AP
Command
tRP
D1
(4) burst length = 8
DQ
Write
D0
Act
AP
Command
tRP
D1
D2
D3
D2
D3
D4
D5
D6
D7
tWR
12
Wirte
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate
command to the start of internal precgarging must be at least tRAS (min).
“Dn” = Write data, and “Qn” = Read data
represents the Write with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note:
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