参数资料
型号: W989D6CBGX7E
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 32M X 16 DDR DRAM, 5.4 ns, PBGA54
封装: 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-54
文件页数: 65/67页
文件大小: 1469K
代理商: W989D6CBGX7E
W989D6CB / W989D2CB
512Mb Mobile LPSDR
Publication Release Date: Jun, 27, 2011
- 7 -
Revision A01-004
6. ELECTRICAL CHARACTERISTICS
6.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
VALUES
UNITS
MIN
MAX
Voltage on VDD relative to VSS
VDD
0.3
2.7
V
Voltage on VDDQ relative to VSS
VDDQ
0.3
2.7
V
Voltage on any pin relative to VSS
VIN, VOUT
0.3
2.7
V
Operating
Temperature
Tc
-25
-40
85
°C
Storage Temperature
TSTG
55
150
°C
Short Circuit Output Current
IOUT
±50
mA
Power Dissipation
PD
1.0
W
6.2 Operating Conditions
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply Voltage
VDD
1.7
1.8
1.95
V
Supply Voltage (for I/O Buffer)
VDDQ
1.7
1.8
1.95
V
Input High level Voltage
VIH
0.8*VDDQ
-
VDDQ+0.3
V
Input Low level Voltage
VIL
-0.3
-
+0.3
V
LVCOMS Output H Level Voltage (IOUT = -0.1 mA )
VOH
0.9*VDDQ
-
V
LVCMOS Output L Level Voltage (IOUT = +0.1 mA )
VOL
-
0.2
V
Input Leakage Current
(0V
VIN
VDD, all other pins not under test = 0V)
II(L)
-1
-
1
A
Output Leakage Current (Output disable , 0V
VOUT
VDDQ)
IO(L)
-5
-
5
A
Note: VIH(max) = VDD/ VDDQ+1.2V for pulse width < 5 ns , VIL(min) = VSS/ VSSQ-1.2V for pulse width < 5 ns
6.3 Capacitance
(VDD = 1.7V~1.9V, f = 1 MHz, TA = 25°C)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Input Capacitance
(A[ n : 0] , BA0, BA1,
CS , RAS , CAS ,
WE , DQM, CKE)
CI
1.5
3.0
pf
Input Capacitance (CLK)
CCLK
1.5
3.5
pf
Input/Output capacitance
CIO
3.0
5.0
pf
Note: These parameters are periodically sampled and not 100% tested.
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