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| 型号： | W989D6CBGX7E |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 5.4 ns, PBGA54 |
| 封装： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-54 |
| 文件页数： | 7/67页 |
| 文件大小： | 1469K |
| 代理商： | W989D6CBGX7E |
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W989D6CB / W989D2CB
512Mb Mobile LPSDR
Publication Release Date: Jun, 27, 2011
- 15 -
Revision A01-004
7.1.2 Functional Truth Table
(See Note 1 at the end of this Table)
Current State
CS
RAS
CAS
WE
Address
Command
Action
Notes
Idle
H
X
DSL
Nop
L
H
X
NOP/BST
Nop
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BS, RA
ACT
Row activating
L
H
L
BS, A10
PRE/PREA
Nop
L
H
X
AREF/SELF
Refresh or Self refresh
2
L
Op-Code
MRS/EMRS
Mode register accessing
2
Row active
H
X
DSL
Nop
L
H
X
NOP/BST
Nop
L
H
L
H
BS, CA, A10
READ/READA
Begin read: Determine AP
4
L
H
L
BS, CA, A10
WRIT/WRITA
Begin write: Determine AP
4
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
Precharge
5
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
Read
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
Burst stop
L
H
L
H
BS, CA, A10
READ/READA
Term burst, new read: Determine
AP
6
L
H
L
BS, CA, A10
WRIT/WRITA
Term burst, begin write:
Determine AP
6,7
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
Term burst, precharging
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
Write
H
X
DSL
Continue burst to end.
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
Burst stop, row active
L
H
L
H
BS, CA, A10
READ/READA
Term burst, start read: Determine
AP
6, 7
L
H
L
BS, CA, A10
WRIT/WRITA
Term burst, new write: Determine
AP
6
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
Term burst. precharging
8
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W989D6CBGX7G | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPSDR |
| W989D6KBGX7E | 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 512MBIT 54VFBGA |
| W98AD2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY SDRAM 1GB 90VFBGA |
| W98AD2KBJX6I | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY SDRAM 1GB 90VFBGA |
| W98M9640 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor |
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