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参数资料
| 型号： | W989D6CBGX7E |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 5.4 ns, PBGA54 |
| 封装： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-54 |
| 文件页数： | 21/67页 |
| 文件大小： | 1469K |
| 代理商： | W989D6CBGX7E |
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W989D6CB / W989D2CB
512Mb Mobile LPSDR
Publication Release Date: Jun, 27, 2011
- 28 -
Revision A01-004
Addressing sequence of Sequential mode
A column access is performed by incrementing the column address input to the device. The address is varied by the Burst Length
shown as below table.
8.5.3 Addressing Sequence for Sequential Mode
DATA
Access Address
Burst Length
Data0
Data1
Data2
Data3
Data4
Data5
Data6
Data7
n
n + 1
n + 2
n + 3
n + 4
n + 5
n + 6
n + 7
8 words (Address bits is A2, A1, A0)
not carried from A2 to A3
4 words (Address bits is A1, A0)
not carried from A1 to A2
2 words (Address bits is A0)
not carried from A0 to A1
Addressing sequence of Interleave mode
A column access is started from the input column address and is performed by inverting the address bits in the sequence shown
as below table.
8.5.4 Addressing Sequence for Interleave Mode
DATA
Access Address
Burst Length
Data0
Data1
Data2
Data3
Data4
Data5
Data6
Data7
A8 A7 A6 A5 A4 A3 A2 A1 A0
8 words
4 words
2 words
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W989D6CBGX7G | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPSDR |
| W989D6KBGX7E | 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 512MBIT 54VFBGA |
| W98AD2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY SDRAM 1GB 90VFBGA |
| W98AD2KBJX6I | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY SDRAM 1GB 90VFBGA |
| W98M9640 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor |
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