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| 型号： | ATF-501P8-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封装： | 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 |
| 文件页数： | 12/22页 |
| 文件大小： | 786K |
| 代理商： | ATF-501P8-TR1 |
2
ATF-501P8 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
VDS
Drain–Source Voltage[2]
V
7
VGS
Gate–Source Voltage[2]
V
-5 to 0.8
VGD
Gate Drain Voltage[2]
V
-5 to 1
IDS
Drain Current[2]
A
1
IGS
Gate Current
mA
12
Pdiss
Total Power Dissipation[3]
W
3.5
Pin max.
RF Input Power
dBm
30
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
θch_b
Thermal Resistance[4]
°C/W
23
Notes:
1. Operation of this device in excess of
any one of these parameters may cause
permanent damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is
25°C. Derate 43.5 mW/°C for TB > 69.5°C.
4. Channel-to-board
thermal
resistance
measured using 150°C Liquid Crystal
Measurement method.
Notes:
5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have
been de-embedded from actual measurements.
Figure 1. Typical IV curve (Vgs = 0.01V) per step.
Vds (V)
Ids
(mA)
0
6
1
2
3
4
5
800
700
600
500
400
300
200
100
0
Vgs=0.6V
Vgs=0.55V
Vgs=0.5V
Vgs=0.7V
Vgs=0.65V
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA[5,6]
Figure 2. P1dB.
P1dB (dBm)
27.5
30.5
28
28.5
29
29.5
30
120
100
80
60
40
20
0
Cpk=1.76
Stdev=0.3
+3 Std
–3 Std
Figure 3. PAE.
PAE (%)
45
85
55
65
75
120
100
80
60
40
20
0
Cpk=1.51
Stdev=3.38
+3 Std
–3 Std
Figure 4. Gain.
GAIN (dB)
13
17
14
15
16
100
80
60
40
20
0
Cpk=1.61
Stdev=0.33
+3 Std
–3 Std
Figure 5. OIP3.
OIP3 (dBm)
42
50
43
44
45
46
47
48
49
100
80
60
40
20
0
Cpk=1.1
Stdev=0.87
+3 Std
–3 Std
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| ATF-511P8-BLKG | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
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| ATF-511P8-BLK | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR1 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR2 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-501P8-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-511P8 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
| ATF-511P8-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-511P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-511P8-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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