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参数资料
| 型号： | ATF-501P8-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封装： | 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 |
| 文件页数： | 17/22页 |
| 文件大小： | 786K |
| 代理商： | ATF-501P8-TR1 |
4
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V 280 mA and
4.5V 400 mA quiesent bias respectively:
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply.
Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Typical Gammas at Optimum OIP3 at 4.5V 280 mA
Optimized for maximum OIP3 at 4.5V 280 mA
Freq (GHz)
OIP3
Gain
P1dB
PAE
Gamma Source
Gamma Load
0.9
46.42
16.03
26.67
45.80
0.305 < -140
0.577 < 162
2.0
45.50
15.07
28.93
50.30
0.806 < -179.2
0.511 < 164
2.4
44.83
12.97
29.03
45.70
0.756 < -167
0.589 < -168
3.9
43.97
6.11
27.33
33.90
0.782 < -162
0.524 < -153
Typical Gammas at Optimum P1dB at 4.5V 280mA
Optimized for maximum P1dB at 4.5V 280 mA
Freq (GHz)
OIP3
Gain
P1dB
PAE
Gamma Source
Gamma Load
0.9
39.29
20.90
30.49
41.00
0.859 < 165
0.757 < 179
2.0
41.79
14.72
30.60
45.30
0.76 < -171
0.691 < -168
2.4
42.37
11.25
30.24
39.70
0.745 < -166
0.694 < -161
3.9
42.00
5.63
28.26
25.80
0.759 < -159
0.708 < -149
RF Input
2.2
F
Gate
Supply
Drain
Supply
15 Ohm
15 nH
1.8 nH
1.2 pF
50 Ohm
.02
50 Ohm
.02
110 Ohm
.03
110 Ohm
.03
1.2 pF
3.3 nH
RF Output
47 nH
2.2
F
DUT
Typical Gammas at Optimum OIP3 at 4.5V 400 mA
Optimized for maximum OIP3 at 4.5V 400 mA
Freq (GHz)
OIP3
Gain
P1dB
PAE
Gamma Source
Gamma Load
0.9
49.15
16.85
27.86
44.20
0.5852 < -135.80
0.4785 < 177.00
2.0
48.18
14.72
29.36
48.89
0.7267 < -175.37
0.7338 < 179.56
2.4
47.54
12.47
29.10
46.83
0.6155 < -171.71
0.5411 < -172.02
3.9
45.44
8.05
28.49
37.02
0.7888 < -148.43
0.5247 < -145.84
Typical Gammas at Optimum P1dB at 4.5V 400 mA
Optimized for maximum P1dB at 4.5V 400 mA
Freq (GHz)
OIP3
Gain
P1dB
PAE
Gamma Source
Gamma Load
0.9
41.78
21.84
31.23
49.97
0.7765 < 168.50
0.7589 < -175.09
2.0
43.28
14.83
31.03
44.78
0.8172 < -175.74
0.8011 < -165.75
2.4
42.46
11.90
30.66
41.00
0.8149 < -163.78
0.8042 < -161.79
3.9
42.94
7.70
29.56
33.06
0.8394 < -151.21
0.7826 < -149.00
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-511P8-BLKG | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR2G | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-BLK | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR1 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR2 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-501P8-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-511P8 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
| ATF-511P8-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-511P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-511P8-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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