- 您现在的位置：买卖IC网 > PDF目录42903 > ATF-501P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 PDF资料下载
参数资料
| 型号： | ATF-501P8-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封装： | 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 |
| 文件页数： | 20/22页 |
| 文件大小： | 786K |
| 代理商： | ATF-501P8-TR1 |
7
ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimum OIP3 at 4.5V 280 mA
Figure 24. OIP3 vs. Temperature and Frequency
at Optimal OIP3.
FREQUENCY (GHz)
OIP3
(dBm)
0.5
4
1
1.5
2
2.5
3
3.5
50
40
30
20
10
0
-40C
25C
85C
Figure 25. OIP3 vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
OIP3
(dBm)
0.5
4
1
1.5
2
2.5
3
3.5
50
40
30
20
10
0
-40C
25C
85C
Figure 26. P1dB vs. Temperature and
Frequency at Optimal OIP3.
FREQUENCY (GHz)
P1dB
(dBm)
0.5
4
1
1.5
2
2.5
3
3.5
35
30
25
20
15
-40C
25C
85C
Figure 27. P1dB vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
P1dB
(dBm)
0.5
4
1
1.5
2
2.5
3
3.5
35
30
25
20
15
-40C
25C
85C
Figure 28. Gain vs. Temperature and
Frequency at Optimal OIP3.
FREQUENCY (GHz)
GAIN
(dB)
0.5
4
1
1.5
2
2.5
3
3.5
20
15
10
5
0
-40C
25C
85C
Figure 29. Gain vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
GAIN
(dB)
0.5
4
1
1.5
2
2.5
3
3.5
25
20
15
10
5
0
-40C
25C
85C
Figure 30. PAE vs. Temperature and
Frequency at Optimal OIP3.
FREQUENCY (GHz)
PA
E(%)
0.5
4
1
1.5
2
2.5
3
3.5
60
50
40
30
20
10
0
-40C
25C
85C
Figure 31. PAE vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
PA
E(%)
0.5
4
1
1.5
2
2.5
3
3.5
100
80
60
40
20
0
-40C
25C
85C
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-511P8-BLKG | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR2G | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-BLK | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR1 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR2 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-501P8-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-511P8 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
| ATF-511P8-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-511P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-511P8-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
发布紧急采购，3分钟左右您将得到回复。