参数资料
型号: CP2201-GM
厂商: Silicon Laboratories Inc
文件页数: 81/108页
文件大小: 0K
描述: IC ETH CTRLR SNGL-CHIP 28QFN
标准包装: 73
控制器类型: 以太网控制器,MAC/10Base-T
接口: 并行/串行
电源电压: 3.1 V ~ 3.6 V
电流 - 电源: 75mA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 28-VFQFN 裸露焊盘
供应商设备封装: 28-QFN(5x5)
包装: 管件
产品目录页面: 627 (CN2011-ZH PDF)
配用: 336-1326-ND - KIT REF DESIGN PWR OVER ETHERNET
336-1316-ND - KIT EVAL FOR CP2201 ETH CTRLR
其它名称: 336-1313
CP2200/1
74
Rev. 1.0
13.2. Reading the Flash Memory
Flash reads occur much faster than Flash write or erase operations and are completed within the minimum read
strobe time specified by the parallel host interface. Flash is read using the FLASHADDRH:FLASHADDRL,
FLASHDATA, and FLASHAUTORD registers. The FLASHAUTORD register provides an efficient method of
accessing sequential data in Flash by automatically incrementing the Flash address pointer after each read.
13.2.1. Flash Read Procedure
Step 1: Set FLASHADDRH:FLASHADDRL to the address of the byte to be read.
Step 2: Read the value of the byte from FLASHDATA.
13.2.2. Multiple Byte Flash Read Procedure
Step 1: Set FLASHADDRH:FLASHADDRL to the address of the first byte to be read.
Step 2: For each byte, read the value from FLASHAUTORD.
Table 18. Flash Electrical Characteristics
VDD = 3.1 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameters
Conditions
Min
Typ
Max
Units
Flash Size
8192
bytes
Endurance
20k
100k
Erase/
Write
Erase Cycle Time
11
ms
Write Cycle Time
40
55
70
s
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