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参数资料
| 型号： | HY29F800ATG-90 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 |
| 封装： | PLASTIC, SOP-44 |
| 文件页数： | 15/40页 |
| 文件大小： | 279K |
| 代理商： | HY29F800ATG-90 |
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15
Rev. 1.1/Feb 02
HY29F800A
ming operation (or read operation) within non-sus-
pended sectors. The host can determine the sta-
tus of a program operation during the erase-sus-
pended state just as in the standard programming
operation.
The system must write the Erase Resume com-
mand to exit the Erase Suspend mode and con-
tinue the sector erase operation. Further writes of
the Resume command are ignored. Another Erase
Suspend command can be written after the de-
vice has resumed erasing.
The host may also write the Electronic ID com-
mand sequence when the device is in the Erase
Suspend mode. The device allows reading Elec-
tronic ID codes even if the addresses used for the
ID read cycles are within erasing sectors, since
the codes are not stored in the memory array.
When the device exits the Electronic ID mode, the
device reverts to the Erase Suspend mode, and is
ready for another valid operation. See Electronic
ID section for more information.
Electronic ID Command
The Electronic ID operation intended for use in
programming equipment has been described pre-
viously. The host processor can also be obtain
the same data by using the Electronic ID command
sequence shown in Table 5. This method does
not require V
ID
on any pin. The Electronic ID com-
mand sequence may be invoked while the device
is in the Read mode or the Erase Suspend mode,
but is invalid while the device is actively program-
ming or erasing.
The Electronic ID command sequence is initiated
by writing two unlock cycles, followed by the Elec-
tronic ID command. The device then enters the
Electronic ID mode, and:
A read cycle at address 0xXXX00 retrieves the
manufacturer code (Hynix = 0xAD).
In Word mode, a read cycle at address
0xXXX01 returns the device code
(HY29F800AT = 0x22D6, HY29F800AB =
0x2258). In Byte mode, the same information
is retrieved from address 0xXXX02
(HY29F800AT = 0xD6, HY29F800AB = 0x58).
In Word mode, a read cycle containing a sec-
tor address in A[18:12] and the address 0x02
in A[7:0] returns 0xXX01 if that sector is pro-
tected, or 0xXX00 if it is unprotected. In Byte
mode, the status information is retrieved using
0x04 in A[6:-1] (0x01 if the sector is protected,
0x00 if the sector is unprotected).
The host system may read at any address any
number of times, without initiating another com-
mand sequence. Thus, for example, the host may
determine the protection status for all sectors by
doing successive reads at the address specified
above while changing the A[18:12] for each cycle.
The system must write the Reset command to exit
the Electronic ID mode and return to the Read
mode, or to the Erase Suspend mode if the de-
vice was in that mode when the command se-
quence was issued.
WRITE OPERATION STATUS
The HY29F800A provides a number of facilities to
determine the status of a program or erase opera-
tion. These are the RY/BY# (Ready/Busy#) pin
and certain bits of a status word which can be read
from the device during the programming and erase
operations. Table 6 summarizes the status indi-
cations and further detail is provided in the sub-
sections which follow.
RY/BY# - Ready/Busy#
RY/BY# is an open-drain output pin that indicates
whether a programming or erase Automatic Algo-
rithm is in progress or has completed. A pull-up
resistor to V
CC
is required for proper operation. RY/
BY# is valid after the rising edge of the final WE#
pulse in the corresponding command sequence.
If the output is Low (busy), the device is actively
erasing or programming, including programming
while in the Erase Suspend mode. If the output is
High (ready), the device has completed the op-
eration and is ready to read array data in the nor-
mal or Erase Suspend modes, or it is in the standby
mode.
DQ[7] - Data# Polling
The Data# (
“
Data Bar
”
) Polling bit, DQ[7], indicates
to the host system whether an Automatic Algo-
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| HY29F800ATG-90I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-12 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-12I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-55 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-55I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
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