参数资料
型号: HY29F800ATG-90
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
中文描述: 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
封装: PLASTIC, SOP-44
文件页数: 3/40页
文件大小: 279K
代理商: HY29F800ATG-90
3
Rev. 1.1/Feb 02
HY29F800A
PIN CONFIGURATIONS
Standard
TSOP48
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
CE#
A0
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
V
SS
DQ15/A-1
48
47
46
45
A11
A10
A9
A8
NC
NC
WE#
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A15
A14
A13
A12
1
2
3
4
Reverse
TSOP48
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48
47
46
45
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
2
3
4
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A15
A14
A13
A12
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A16
BYTE#
V
SS
DQ15/A-1
A0
A6
A5
A4
A3
A2
A1
A0
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
CE#
V
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
RY/BY#
A18
A17
A7
1
2
3
4
A10
A11
A12
A13
A14
A15
A16
BYTE#
V
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET#
WE#
A8
A9
44
43
42
41
P
CONVENTIONS
Unless otherwise noted, a positive logic (active
High) convention is assumed throughout this docu-
ment, whereby the presence at a pin of a higher,
more positive voltage (nominally 5VDC) causes
assertion of the signal. A
#
symbol following the
signal name, e.g., RESET#, indicates that the sig-
nal is asserted in a Low state (nominally 0 volts).
Whenever a signal is separated into numbered bits,
e.g., DQ[7], DQ[6], ..., DQ[0], the family of bits may
also be shown collectively, e.g., as DQ[7:0].
The designation 0xNNNN (N = 0, 1, 2, . . . , 9, A, .
. . , E, F) indicates a number expressed in hexadeci-
mal notation. The designation 0bXXXX indicates a
number expressed in binary notation (X = 0, 1).
相关PDF资料
PDF描述
HY29F800ATG-90I 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12I 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29LV320TF-90 32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320BF-12 Dust Cover; For Use With:Anderson Power SB350 Series Connectors; Color:Red
相关代理商/技术参数
参数描述
HY29F800ATG-90I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-55 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-55I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory