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参数资料
| 型号： | HY29F800ATG-90 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 |
| 封装： | PLASTIC, SOP-44 |
| 文件页数： | 34/40页 |
| 文件大小： | 279K |
| 代理商： | HY29F800ATG-90 |
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34
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
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Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25
°
C, V
= 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90
°
C, V
= 4.5 volts (4.75 volts for 50 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes are
programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most bytes
program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum byte
program time specified is exceeded. See Write Operation Status section for additional information.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY29F800ATG-90I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-12 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-12I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-55 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-55I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
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