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参数资料
| 型号： | HY29F800ATG-90 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 |
| 封装： | PLASTIC, SOP-44 |
| 文件页数： | 20/40页 |
| 文件大小： | 279K |
| 代理商： | HY29F800ATG-90 |
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20
Rev. 1.1/Feb 02
HY29F800A
ABSOLUTE MAXIMUM RATINGS
4
l
b
m
y
S
T
G
T
S
r
S
T
S
A
I
B
m
A
a
V
r
t
m
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r
P
e
1
1
u
V
o
5
6
o
5
5
t
U
C
o
C
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e
R
r
r
p
m
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p
m
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T
n
n
o
C
C
V
O
,
A
h
O
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C
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S
e
g
t
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g
a
5
5
2
2
+
+
-
-
d
e
p
A
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V
w
o
P
h
w
p
s
e
r
h
w
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V
2
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S
S
:
1
#
T
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S
1
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C
R
,
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c
2
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t
0
+
5
1
+
0
+
0
0
2
o
o
o
0
-
0
-
0
-
V
V
V
m
I
S
O
t
e
t
p
O
3
A
Notes:
1. Minimum DC voltage on input or I/O pins is
–
0.5 V. During voltage transitions, input or I/O pins may undershoot V
to
-2.0V for periods of up to 20 ns. See Figure 9. Maximum DC voltage on input or I/O pins is V
+ 0.5 V. During voltage
transitions, input or I/O pins may overshoot to V
+2.0 V for periods up to 20 ns. See Figure 10.
2. Minimum DC input voltage on pins A[9], OE#, and RESET# is -0.5 V. During voltage transitions, A[9], OE#, and RESET#
may undershoot V
to
–
2.0 V for periods of up to 20 ns. See Figure 9. Maximum DC input voltage on these pins is +12.5
V which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output at a time may be shorted to V
. Duration of the short circuit should be less than one second.
4. Stresses above those listed under
“
Absolute Maximum Ratings
”
may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
1
l
o
b
m
T
A
y
S
r
e
m
a
r
a
P
:
p
m
:
g
a
V
s
n
o
V
o
V
r
h
O
e
7
u
V
o
0
t
C
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T
g
n
p
O
p
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S
g
0
5
l
A
t
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m
n
p
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A
0
+
o
V
C
C
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s
n
5
0
2
+
5
+
o
o
5
0
7
+
5
+
V
V
Notes:
1. Recommended Operating Conditions define those limits between which the functionality of the device is guaranteed.
2.0 V
V
CC
+ 0.5 V
V
CC
+ 2.0 V
20 ns
20 ns
20 ns
Figure 9. Maximum Undershoot Waveform
Figure 10. Maximum Overshoot Waveform
0.8 V
- 0.5 V
- 2.0 V
20 ns
20 ns
20 ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY29F800ATG-90I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-12 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-12I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-55 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-55I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
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