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参数资料
| 型号： | IS61VPS51218A-250B3 |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 512K X 18 CACHE SRAM, 2.6 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 |
| 文件页数： | 1/35页 |
| 文件大小： | 562K |
| 代理商： | IS61VPS51218A-250B3 |
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Integrated Silicon Solution, Inc.
1
Rev. I
1/13/09
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
FEATURES
Internalself-timedwritecycle
IndividualByteWriteControlandGlobalWrite
Clockcontrolled,registeredaddress,dataand
control
BurstsequencecontrolusingMODEinput
Threechipenableoptionforsimpledepthex-
pansion and address pipelining
Commondatainputsanddataoutputs
AutoPower-downduringdeselect
Singlecycledeselect
SnoozeMODEforreduced-powerstandby
JTAGBoundaryScanforPBGApackage
PowerSupply
LPS:Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5%
VPS:Vdd 2.5V + 5%, Vddq 2.5V + 5%
JEDEC100-PinTQFP,119-ballPBGA,and
165-ballPBGApackages
Lead-freeavailable
DESCRIPTION
The
ISSIIS61LPS/VPS25636A,IS61LPS25632A,IS64-
LPS25636AandIS61LPS/VPS51218Aarehigh-speed,
low-powersynchronousstaticRAMs designed to provide
burstable, high-performance memory for communication
andnetworkingapplications.TheIS61LPS/VPS25636A
and IS64LPS25636Aareorganizedas262,144 words
by36bits.TheIS61LPS25632Aisorganizedas262,144
wordsby32bits.TheIS61LPS/VPS51218Aisorganized
as524,288wordsby18bits.Fabricatedwith
ISSI's ad-
vancedCMOStechnology,thedeviceintegratesa2-bit
burstcounter,high-speedSRAMcore,andhigh-drive
capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
apositive-edge-triggeredsingleclockinput.
Writecyclesareinternallyself-timedandareinitiatedby
therisingedgeoftheclockinput.Writecyclescanbe
one to four bytes wide as controlled by the write control
inputs.
Separate byte enables allow individual bytes to be written.
Thebytewriteoperationisperformedbyusingthebyte
write enable (BWE) input combined with one or more
individual byte write signals (BWx). Inaddition,Global
Write(GW) is available for writing all bytes at one time,
regardless of the byte write controls.
BurstscanbeinitiatedwitheitherADSP (Address Status
Processor)orADSC (Address Status Cache Controller)
inputpins.Subsequentburstaddressescanbegener-
ated internally and controlled by the ADV (burst address
advance) input pin.
Themodepinisusedtoselecttheburstsequenceor-
der,LinearburstisachievedwhenthispinistiedLOW.
InterleaveburstisachievedwhenthispinistiedHIGH
or left floating.
256K x 36, 256K x 32, 512K x 18
9 Mb SYNCHRONOUS PIPELINED,
SINgLE CYCLE DESELECT STATIC RAM
JANUARY 2009
FAST ACCESS TIME
Symbol
Parameter
250
200
166
Units
tkq
ClockAccessTime
2.6
3.1
3.5
ns
tkc
CycleTime
4
5
6
ns
Frequency
250
200
166
MHz
相关PDF资料 |
PDF描述 |
|---|---|
| IS61VPS51218A-250B3I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61VPS51218A-250TQ | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61VPS51218A-250TQI | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61VPS51236A-200B2 | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS62WV10248DBLL-45MLI | 1M X 8 STANDARD SRAM, 45 ns, PBGA48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61VPS51232-166TQI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61VPS51236A-200B3 | 功能描述:静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61VPS51236A-200B3I | 功能描述:静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61VPS51236A-200B3I-TR | 功能描述:静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61VPS51236A-200B3-TR | 功能描述:静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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