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参数资料
| 型号： | IS61VPS51218A-250B3 |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 512K X 18 CACHE SRAM, 2.6 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 |
| 文件页数： | 3/35页 |
| 文件大小： | 562K |
| 代理商： | IS61VPS51218A-250B3 |
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Integrated Silicon Solution, Inc.
11
Rev. I
01/13/09
IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
PARTIAL TRUTH TABLE
Function
GW
BWE
BWa
BWb
BWc
BWd
Read
H
X
Read
H
L
H
WriteByte1
H
L
H
WriteAllBytes
H
L
WriteAllBytes
L
X
TRUTH TABLE(1-8)
OPERATION
ADDRESS CE CE2
CE2 ZZ ADSP ADSC ADV
WRITE OE
CLK
DQ
DeselectCycle,Power-Down
None
H
X
L
X
L
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
X
L
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
H
X
L
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
X
L
H
L
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
H
X
L
H
L
X
L-H
High-Z
SnoozeMode,Power-Down
None
X
H
X
High-Z
ReadCycle,BeginBurst
External
L
H
L
X
L
L-H
Q
ReadCycle,BeginBurst
External
L
H
L
X
H
L-H
High-Z
WriteCycle,BeginBurst
External
L
H
L
H
L
X
L
X
L-H
D
ReadCycle,BeginBurst
External
L
H
L
H
L
X
H
L
L-H
Q
ReadCycle,BeginBurst
External
L
H
L
H
L
X
H
L-H
High-Z
ReadCycle,ContinueBurst
Next
X
L
H
L
H
L
L-H
Q
ReadCycle,ContinueBurst
Next
X
L
H
L
H
L-H
High-Z
ReadCycle,ContinueBurst
Next
H
X
L
X
H
L
H
L
L-H
Q
ReadCycle,ContinueBurst
Next
H
X
L
X
H
L
H
L-H
High-Z
WriteCycle,ContinueBurst
Next
X
L
H
L
X
L-H
D
WriteCycle,ContinueBurst
Next
H
X
L
X
H
L
X
L-H
D
ReadCycle,SuspendBurst
Current
X
L
H
L
L-H
Q
ReadCycle,SuspendBurst
Current
X
L
H
L-H
High-Z
ReadCycle,SuspendBurst
Current
H
X
L
X
H
L
L-H
Q
ReadCycle,SuspendBurst
Current
H
X
L
X
H
L-H
High-Z
WriteCycle,SuspendBurst
Current
X
L
H
L
X
L-H
D
WriteCycle,SuspendBurst
Current
H
X
L
X
H
L
X
L-H
D
NOTE:
1. Xmeans“Don’tCare.”HmeanslogicHIGH.LmeanslogicLOW.
2. ForWRITE, L means one or more byte write enable signals (BWa-d) and BWEareLOWorGWisLOW.WRITE=Hforall
BWx
, BWE, GWHIGH.
3. BWaenablesWRITEstoDQa’sandDQPa.BWbenablesWRITEstoDQb’sandDQPb.BWcenablesWRITEstoDQc’s and
DQPc.BWdenablesWRITEstoDQd’sandDQPd.DQPaandDQPbareavailableonthex18version. DQPa-DQPdareavail-
ableonthex36version.
4. AllinputsexceptOEandZZmustmeetsetupandholdtimesaroundtherisingedge(LOWtoHIGH)ofCLK.
5. Waitstatesareinsertedbysuspendingburst.
6. ForaWRITEoperationfollowingaREADoperation,OEmustbeHIGHbeforetheinputdatasetuptimeandheldHIGHduring
the input data hold time.
7. ThisdevicecontainscircuitrythatwillensuretheoutputswillbeinHigh-Zduringpower-up.
8. ADSPLOWalwaysinitiatesaninternalREADattheL-HedgeofCLK.AWRITEisperformedbysettingoneormorebytewrite
enable signals and BWELOWorGWLOWforthesubsequentL-HedgeofCLK.SeeWRITEtimingdiagramforclarification.
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相关代理商/技术参数 |
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| IS61VPS51232-166TQI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61VPS51236A-200B3 | 功能描述:静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61VPS51236A-200B3I | 功能描述:静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61VPS51236A-200B3I-TR | 功能描述:静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61VPS51236A-200B3-TR | 功能描述:静态随机存取存储器 18Mb,Pipeline,Sync,512K x 36,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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