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参数资料
| 型号： | M25PE40VMW6G |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件页数： | 31/62页 |
| 文件大小： | 565K |
| 代理商： | M25PE40VMW6G |
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M25PE40
Instructions
37/62
6.13
Subsector Erase (SSE)
Note:
The Subsector Erase (SSE) instruction is decoded only in the M25PE40 in the T9HX
process (see Important note on page 6).
The Subsector Erase (SSE) instruction sets to ‘1’ (FFh) all bits inside the chosen subsector.
Before it can be accepted, a Write Enable (WREN) instruction must previously have been
executed. After the Write Enable (WREN) instruction has been decoded, the device sets the
Write Enable Latch (WEL).
The Subsector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by
the instruction code, and three address bytes on Serial Data input (D). Any address inside
the Subsector (see Table 4) is a valid address for the Subsector Erase (SE) instruction. Chip
Select (S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 20.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the Subsector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Subsector Erase cycle (whose duration is tSSE) is
initiated. While the Subsector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Subsector Erase cycle, and is 0 when it is completed. At some
unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Subsector Erase (SSE) instruction applied to a subsector that contains a page that is
hardware or software protected is not executed.
Any Subsector Erase (SSE) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
If Reset (Reset) is driven Low while a Subsector Erase (SSE) cycle is in progress, the
Subsector Erase cycle is interrupted and data may not be erased correctly (see Table 12:
Device status after a Reset Low pulse). On Reset going Low, the device enters the Reset
mode and a time of tRHSL is then required before the device can be re-selected by driving
Figure 19.
Subsector Erase (SSE) instruction sequence
1.
Address bits A23 to A19 are Don’t care.
24-bit address
C
D
AI12356
S
2
1
3456789
29 30 31
Instruction
0
23 22
20
1
MSB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M25PE40-VMW6G | 功能描述:闪存 4 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25PE40-VMW6G_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE40VMW6P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMW6P | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE40VMW6TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
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