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参数资料
| 型号： | M25PE40VMW6G |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件页数： | 56/62页 |
| 文件大小： | 565K |
| 代理商： | M25PE40VMW6G |
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Description
M25PE40
1
Description
The M25PE40 is a 4 Mbit (512 Kbit × 8 bit) serial paged Flash memory accessed by a high
speed SPI-compatible bus.
The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or
Page Program instruction. The Page Write instruction consists of an integrated Page Erase
cycle followed by a Page Program cycle.
The memory is organized as 8 sectors that are further divided up into 16 subsectors each
(128 subsectors in total). Each sector contains 256 pages and each subsector contains 16
pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting
of 2048 pages, or 524,288 bytes.
The memory can be erased a page at a time, using the Page Erase instruction, a subsector
at a time, using the Subsector Erase instruction, a sector at a time, using the Sector Erase
instruction or as a whole, using the Bulk Erase (BE) instruction.
The memory can be write protected by either hardware or software using a mix of volatile
and non-volatile protection features, depending on the application needs. The protection
granularity is of 64 Kbytes (sector granularity).
Important note
This datasheet details the functionality of the devices, based on the previous T7X process or
based on the current T9HX process (available since July 2007). Delivery of parts operating
with a maximum clock rate of 75 MHz starts from week 8 of 2008.
What are the changes?
The M25PE40 in T9HX process offers the following additional features:
●
the whole memory array is partitioned into 4-Kbyte subsectors
●
five new instructions: Write Status Register (WRSR), Write to Lock Register (WRLR),
Read Lock Register (RDLR), 4-Kbyte Subsector Erase (SSE) and Bulk Erase (BE)
●
Status Register: 4 bits can be written (BP0, BP1, BP2, SRWD)
●
WP input (pin 3): write protection limits are extended, depending on the value of the
BP0, BP1, BP2, SRWD bits. The WP write protection remains the same if bits (BP2,
BP1, BP0) are set to (0, 0, 1)
●
smaller die size allowing assembly into an SO8N package.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M25PE40-VMW6G | 功能描述:闪存 4 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25PE40-VMW6G_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25PE40VMW6P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
| M25PE40-VMW6P | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE40VMW6TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout |
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