参数资料
型号: M25PE40VMW6G
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 512K X 8 SPI BUS SERIAL EEPROM, PDSO8
封装: 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
文件页数: 6/62页
文件大小: 565K
代理商: M25PE40VMW6G
Operating features
M25PE40
4.7
Status Register
The Status Register contains a number of status and control bits that can be read or set (as
appropriate) by using specific instructions. See Section 6.4: Read Status Register (RDSR)
for a detailed description of the Status Register bits.
4.8
Protection modes
The environments where non-volatile memory devices are used can be very noisy. No SPI
device can operate correctly in the presence of excessive noise. To help combat this, the
features the following data protection mechanisms:
4.8.1
Protocol-related protections
Power On Reset and an internal timer (tPUW) can provide protection against inadvertent
changes while the power supply is outside the operating specification.
Program, Erase and Write instructions are checked that they consist of a number of
clock pulses that is a multiple of eight, before they are accepted for execution.
All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state
by the following events:
–Power-up
Reset (Reset) driven Low
Write Disable (WRDI) instruction completion
Page Write (PW) instruction completion
Page Program (PP) instruction completion
Write to Lock Register (WRLR) instruction completion
Page Erase (PE) instruction completion
Subsector Erase (SSE) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
The Reset (Reset) signal can be driven Low to freeze and reset the internal logic. For
the specific cases of Program and Write cycles, the designer should refer to
In addition to the low power consumption feature, the Deep Power-down mode offers
extra software protection from inadvertent Write, Program and Erase instructions while
the device is not in active use.
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相关代理商/技术参数
参数描述
M25PE40-VMW6G 功能描述:闪存 4 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M25PE40-VMW6G_NUD 制造商:Micron Technology Inc 功能描述:
M25PE40VMW6P 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
M25PE40-VMW6P 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE40VMW6TG 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout