参数资料
型号: M295V100-T70XM3R
厂商: 意法半导体
元件分类: FLASH
英文描述: 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
中文描述: 1兆位的128KBx8或64Kbx16,有启动区域的单电源闪存
文件页数: 17/30页
文件大小: 207K
代理商: M295V100-T70XM3R
AI01980B
E
G
W
A0-A15/
A–1
DQ0-DQ7/
DQ8-DQ15
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
RB
tWHRL
Figure 7. WriteAC Waveforms, W Controlled
Note:
Address are latched on the falling edge of W, Datais latched on the rising edge of W.
a blocknot beingerasedreturnsvalid data.During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc-
tions. AProgram operation can be initiatedduring
erase suspend in one of the blocks not being
erased. Itwillresultin bothDQ2andDQ6toggling
whenthedatais beingprogrammed.ARead/Reset
command will definitively abort erasure and result
in invalid data in the blocks being erased.
EraseResume(ER)Instruction.
Ifan EraseSus-
pend instruction was previously executed, the
erase operation may be resumed by giving the
command 30h, at any address, and without any
Codedcycles.
POWER SUPPLY
PowerUp
ThememoryCommandInterfaceisreset onpower
uptoReadArray.Either E or Wmust be tiedto V
IH
during Power Up to allow maximum security and
thepossibilityto writea commandonthefirstrising
edge of E and W. Any write cycle initiation is
blockedwhen Vcc is below V
LKO
.
Supply Rails
Normal precautionsmust be taken for supply volt-
age decoupling; each device in a system should
havethe V
CC
rail decoupledwith a0.1
μ
F capacitor
close to the V
CC
and V
SS
pins. The PCB trace
widths should be sufficient to carry the V
CC
pro-
gramand erase currents required.
17/30
M29F100T, M29F100B
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