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参数资料
| 型号： | M295V100-T70XM3R |
| 厂商： | 意法半导体 |
| 元件分类： | FLASH |
| 英文描述： | 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| 中文描述： | 1兆位的128KBx8或64Kbx16，有启动区域的单电源闪存 |
| 文件页数： | 9/30页 |
| 文件大小： | 207K |
| 代理商： | M295V100-T70XM3R |
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Mne.
Instr.
Cyc.
1st Cyc.
2nd Cyc.
3rd Cyc.
4th Cyc.
5th Cyc.
6th Cyc.
7th Cyc.
RD
(2,4)
Read/Reset
MemoryArray
1+
Addr.
(3,7)
X
ReadMemory Array until a new writecycle is initiated.
Data
F0h
3+
Addr.
(3,7)
Byte
AAAAh
5555h
AAAAh
ReadMemory Array untila new write cycle
is initiated.
Word
5555h
2AAAh
5555h
Data
AAh
55h
F0h
AS
(4)
AutoSelect
3+
Addr.
(3,7)
Byte
AAAAh
5555h
AAAAh
ReadElectronic Signatureor Block
Protection Status until a new write cycle is
initiated. See Note 5 and 6.
Word
5555h
2AAAh
5555h
Data
AAh
55h
90h
PG
Program
4
Addr.
(3,7)
Byte
AAAAh
5555h
AAAAh
Program
Address
Read Data Polling or Toggle Bit
until Program completes.
Word
5555h
2AAAh
5555h
Data
AAh
55h
A0h
Program
Data
BE
BlockErase
6
Addr.
(3,7)
Byte
AAAAh
5555h
AAAAh
AAAAh
5555h
Block
Address
Additional
Block
Word
5555h
2AAAh
5555h
5555h
2AAAh
Data
AAh
55h
80h
AAh
55h
30h
30h
CE
ChipErase
6
Addr.
(3,7)
Byte
AAAAh
5555h
AAAAh
AAAAh
5555h
AAAAh
Note 9
Word
5555h
2AAAh
5555h
5555h
2AAAh
5555h
Data
AAh
55h
80h
AAh
55h
10h
ES
(10)
Erase
Suspend
1
Addr.
(3,7)
X
Readuntil Toggle stops, then read all the dataneeded from any
Block(s) not being erased then Resume Erase.
Data
B0h
ER
Erase
Resume
1
Addr.
(3,7)
X
ReadData Polling or ToggleBits until Erase completes or Erase is
suspended another time
Data
30h
Notes:
1. Commands not interpreted in this table will default to read array mode.
2. Await of t
is necessary after a Read/Reset command if the memory was in an Erase or Program mode
before starting any new operation (see Table 14 and Figure 9).
3. X = Don’t Care.
4. The first cycles of the RD or AS instructions are followed by read operations.Any number of read cycles can occur after
the command cycles.
5. SignatureAddress bitsA0,A1 at V
IL
willoutput Manufacturer code (20h). Address bits A0at V
IH
andA1 at V
IL
will output
Device code.
6. Block Protection Address:A0 at V
, A1at V
and A12-A15within the Block will outputthe Block Protection status.
7. For Coded cycles address inputs A15is don’t care.
8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last writeentry,
timeout status can be verified through DQ3 value (see EraseTimerBit DQ3 description).
When full commandis entered,read Data Polling or Togglebit until Erase is completed or suspended.
9. Read Data Polling, Toggle bits or RB until Erase completes.
10.During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased.
Table8. Instructions
(1)
9/30
M29F100T, M29F100B
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相关代理商/技术参数 |
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| M295V100-T70XM3TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| M295V100-T70XM6R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| M295V100-T70XM6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| M295V100-T70XN1R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| M295V100-T70XN1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
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