参数资料
型号: MC34708VM
厂商: Freescale Semiconductor
文件页数: 73/159页
文件大小: 0K
描述: IC POWER MANAGEMENT 206MAPBGA
标准包装: 160
应用: 通用
电源电压: 1.8 V ~ 4.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 206-LFBGA
供应商设备封装: 206-MAPBGA(13x13)
包装: 托盘
Functional Block Description
Table 62. VDAC Electrical Specification
Characteristics noted under conditions BP = 3.6 V, V BUS = 5.0 V, - 40 ? C ? T A ? 85 ? C, unless otherwise noted. Typical values
at BP = 3.6 V and T A = 25 °C under nominal conditions, unless otherwise noted.
Symbol
Characteristic
Min
Typ
Max
Unit
Notes
VDAC ACTIVE MODE – AC (CONTINUED)
VDAC OS-
Start-up Overshoot
%
START
VDAC LO
TRANSIENT
V DACLI
TRANSIENT
? V IN = V INMIN , V INMAX IL = 0
Transient Load Response
? V IN = V INMIN , V INMAX
Transient Line Response
? IL = 75% of IL MAX
-
-
-
1.0
1.0
5.0
2.0
2.0
8.0
%
mV
t MODE-VDAC Mode Transition Time
μs
? From low power to active V IN = V INMIN , V INMAX IL = IL MAXLP
VDAC MODE Mode Transition Response
-
-
100
%
RES
? From low power to active and from active to low power
-
1.0
2.0
V IN = V INMIN , V INMAX IL = IL MAXLP
7.5.6.9
VGEN1, VGEN2
General purpose LDOs, VGEN1, and VGEN2, are provided for expansion of the power tree to support peripheral devices, which
could include EMMC cards, WLAN, BT, GPS, or other functional modules. These regulators include programmable set points for
system flexibility. VGEN1 has an internal PMOS pass FET, and is powered from the SW5 buck for an efficiency advantage and
reduced power dissipation in the pass devices. VGEN2 is powered directly from the battery.
VGEN2 has an internal PMOS pass FET, which will support loads up to 50 mA. For higher current capability, drive for an external
PNP is provided. The external PNP is offered to avoid excess on-chip power dissipation at high loads and large differentials
between BP and the output settings. The input pin for the integrated PMOS option is shared with the base current drive pin for
the PNP option. The external PNP device is always connected to the BP line in the application. The recommended PNP device
is the ON Semiconductor NSS12100XV6T1G which is capable of handling up to 250 mW of continuous dissipation at minimum
footprint and 75 °C of ambient. For use cases where up to 500 mW of dissipation is required, the recommended PNP device is
the ON Semiconductor NSS12100UW3TCG. For stability, a total resistance of 60 m ? ? 20% in series with the output capacitance
is required. The total resistance includes the ESR of the capacitor plus an external resistance provided by a discrete resistor or
PCB circuit trace.
Table 63. VGEN1 Control Register Bit Assignments
Parameter
VGEN1[2:0]
Value
000
001
010
011
100
101
110
111
Output Voltage
1.2000
1.2500
1.3000
1.3500
1.4000
1.4500
1.5000
1.5500
ILoad max
250 mA
250 mA
250 mA
250 mA
250 mA
250 mA
250 mA
250 mA
The nominal output voltage of VGEN1 is SPI configurable, and can be 1.2 V, 1.25 V, 1.3 V, 1.35 V, 1.4 V, 1.45 V, 1.5 V, or
1.55 V.
MC34708
Analog Integrated Circuit Device Data ?
73
Freescale Semiconductor
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