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参数资料
| 型号： | MSC7119VM1200 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 数字信号处理 |
| 英文描述： | 0-BIT, 300 MHz, OTHER DSP, PBGA400 |
| 封装： | LEAD FREE, MAPBGA-400 |
| 文件页数： | 51/60页 |
| 文件大小： | 1138K |
| 代理商： | MSC7119VM1200 |
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Hardware Design Considerations
MSC7119 Data Sheet, Rev. 8
Freescale Semiconductor
55
3.5.1
VREF and VTT Design Constraints
VTT and VREF are isolated power supplies at the same voltage, with VTT as a high current power source. This section outlines
the voltage supply design needs and goals:
Minimize the noise on both rails.
VTT must track variation in the VREF DC offsets. Although they are isolated supplies, one possible solution is to use a
single IC to generate both signals.
Both references should have minimal drift over temperature and source supply.
It is important to minimize the noise from coupling onto VREF as follows:
— Isolate VREF and shield it with a ground trace.
— Use 15–20 mm track.
— Use 20–30 mm clearance between other traces for isolating.
— Use the outer layer route when possible.
— Use distributed decoupling to localize transient currents and return path and decouple with an inductance less than
3 nH.
Max source/sink transient currents of up to 1.8 A for a 32-bit data bus.
Use a wide island trace on the outer layer:
— Place the island at the end of the bus.
— Decouple both ends of the bus.
— Use distributed decoupling across the island.
— Place SSTL termination resistors inside the VTT island and ensure a good, solid connection.
Place the VTT regulator as closely as possible to the termination island.
— Reduce inductance and return path.
— Tie current sense pin at the midpoint of the island.
3.5.2
Decoupling
The DDR decoupling considerations are as follows:
DDR memory requires significantly more burst current than previous SDRAMs.
In the worst case, up to 64 drivers may be switching states.
Pay special attention and decouple discrete ICs per manufacturer guidelines.
Leverage VTT island topology to minimize the number of capacitors required to supply the burst current needs of the
termination rail.
See the Micron DesignLine publication entitled Decoupling Capacitor Calculation for a DDR Memory Channel
(http://download.micron.com/pdf/pubs/designline/3Q00dl1-4.pdf).
Figure 37. SSTL Power Value
Driver
Receiver
VREF
VDDQ
VSS
VTT
RS
RT
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