参数资料
型号: MT42L256M32D4MG-25 IT:A
厂商: Micron Technology Inc
文件页数: 88/164页
文件大小: 0K
描述: IC LPDDR2 SDRAM 8GBIT 134FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 8G(356M x 32)
速度: 400MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 134-TFBGA
供应商设备封装: 134-FBGA(11.5x11.5)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
MODE REGISTER READ
Table 46: Temperature Sensor Definitions and Operating Conditions
Parameter
System temperature
Description
Maximum temperature gradient experi-
Symbol
TempGradient
Min/Max
MAX
Value
System-dependent
Unit
?C/s
gradient
enced by the memory device at the temper-
ature of interest over a range of 2?C
MR4 READ interval
Time period between MR4 READs from the
ReadInterval
MAX
System-dependent
ms
system
Temperature sensor
Maximum delay between internal updates
t TSI
MAX
32
ms
interval
of MR4
System response
Maximum response time from an MR4 READ
SysRespDelay
MAX
System-dependent
ms
delay
to the system response
Device temperature
Margin above maximum temperature to
TempMargin
MAX
2
?C
margin
support controller response
Mobile LPDDR2 devices accommodate the temperature margin between the point at
which the device temperature enters the extended temperature range and the point at
which the controller reconfigures the system accordingly. To determine the required
MR4 polling frequency, the system must use the maximum TempGradient and the max-
imum response time of the system according to the following equation:
TempGradient × (ReadInterval + tTSI + SysRespDelay) 2°C
For example, if TempGradient is 10?C/s and the SysRespDelay is 1ms:
10°C × (ReadInterval + 32ms + 1ms) 2°C
s
In this case, ReadInterval must not exceed 167ms.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
88
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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