参数资料
型号: MT42L256M32D4MG-25 IT:A
厂商: Micron Technology Inc
文件页数: 90/164页
文件大小: 0K
描述: IC LPDDR2 SDRAM 8GBIT 134FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 8G(356M x 32)
速度: 400MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 134-TFBGA
供应商设备封装: 134-FBGA(11.5x11.5)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
MODE REGISTER READ
Figure 65: MR32 and MR40 DQ Calibration Timing – RL = 3, t MRR = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK#
CK
RL = 3
CA[9:0] Reg 32 Reg 32
Reg 40 Reg 40
t MRR
=2
t MRR
=2
CMD
MRR
NOP 1
MRR
NOP
DQS#
DQS
Pattern A
Pattern B
DQ0
DQ[7:1]
1
1
0
0
1
1
0
0
0
0
0
0
1
1
1
1
x16
DQ8
DQ[15:9]
1
1
0
0
1
1
0
0
0
0
0
0
1
1
1
1
x32
DQ16
DQ[23:17]
DQ24
DQ[31:25]
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
Transitioning data
Optionally driven the same as DQ0 or 0b
Note:
1. Only the NOP command is supported during t MRR.
Table 47: Data Calibration Pattern Description
Bit Time
Bit Time
Bit Time
Bit Time
Pattern
Pattern A
Pattern B
MR#
MR32
MR40
0
1
0
1
0
0
2
1
1
3
0
1
Description
Reads to MR32 return DQ calibration pattern A
Reads to MR40 return DQ calibration pattern B
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
90
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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