参数资料
型号: MT42L256M32D4MG-25 IT:A
厂商: Micron Technology Inc
文件页数: 97/164页
文件大小: 0K
描述: IC LPDDR2 SDRAM 8GBIT 134FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 8G(356M x 32)
速度: 400MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 134-TFBGA
供应商设备封装: 134-FBGA(11.5x11.5)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
Power-Down
Figure 72: READ with Auto Precharge to Power-Down Entry
BL = 4
T0
T1
T2
Tx
Tx + 1
Tx + 2
Tx + 3
Tx + 4
Tx + 5
Tx + 6
Tx + 7
Tx + 8
Tx + 9
CK#
CK
BL/2 3
RL
t ISCK E
CKE 1, 2
CMD
DQ
DQS#
DQS
BL = 8
READ w/AP
PRE 4
D OUT D OUT D OUT D OUT
T0
T1
T2
Tx
Tx + 1
Tx + 2
Tx + 3
Tx + 4
Tx + 5
Tx + 6
Tx + 7
Tx + 8
Tx + 9
CK#
CK
RL
BL/2 3
t ISCK E
CKE
1, 2
CMD
DQ
DQS#
DQS
READ w/AP
Notes:
PRE 4
D OUT D OUT D OUT D OUT D OUT D OUT D OUT D OUT
1. CKE must be held HIGH until the end of the burst operation.
2. CKE can be registered LOW at (RL + RU( t DQSCK/ t CK)+ BL/2 + 1) clock cycles after the
clock on which the READ command is registered.
3. BL/2 with t RTP = 7.5ns and t RAS (MIN) is satisfied.
4. Start internal PRECHARGE.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
97
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
相关PDF资料
PDF描述
P51-300-G-H-I12-20MA-000-000 SENSOR 300PSI M12-1.5 6G 4-20MA
REC5-0509SRW/H2/A/M/SMD CONV DC/DC 5W 4.5-9VIN 09VOUT
P51-500-A-H-P-4.5OVP-000-000 SENSOR 500PSI M12-1.5 6G .5-4.5V
P51-300-A-AD-D-20MA-000-000 SENSOR 300PSI 7/16-20 UNF 4-20MA
P51-300-A-H-P-4.5OVP-000-000 SENSOR 300PSI M12-1.5 6G .5-4.5V
相关代理商/技术参数
参数描述