参数资料
型号: MT42L256M32D4MG-25 IT:A
厂商: Micron Technology Inc
文件页数: 99/164页
文件大小: 0K
描述: IC LPDDR2 SDRAM 8GBIT 134FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 8G(356M x 32)
速度: 400MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 134-TFBGA
供应商设备封装: 134-FBGA(11.5x11.5)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
Power-Down
Figure 74: WRITE with Auto Precharge to Power-Down Entry
BL = 4
T0
T1
Tm
Tm + 1
Tm + 2
Tm + 3
Tx
Tx + 1
Tx + 2
Tx + 3
Tx + 4
Tx + 5
Tx + 6
CK#
CK
WL
CKE 1
BL/2
t WR
t ISCKE
CMD
WRITE w/AP
PRE 2
DQ
D IN
D IN
D IN
D IN
DQS#
DQS
BL = 8
T0
T1
Tm
Tm + 1
Tm + 2
Tm + 3
Tm + 4
Tm + 5
Tx
Tx + 1
Tx + 2
Tx + 3
Tx + 4
CK#
CK
WL
CKE 1
BL/2
t WR
t ISCKE
CMD
WRITE w/AP
PRE 2
DQ
D IN
D IN
D IN
D IN
D IN
D IN
D IN
D IN
DQS#
DQS
Notes:
1. CKE can be registered LOW at (WL + 1 + BL/2 + RU( t WR/ t CK + 1) clock cycles after the
WRITE command is registered.
2. Start internal PRECHARGE.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
99
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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