参数资料
型号: MT46H256M32L4CM-54IT:A
元件分类: DRAM
英文描述: 256M X 32 DDR DRAM, 5 ns, PBGA90
封装: 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
文件页数: 101/106页
文件大小: 3431K
Figure 53: Bank Read – With Auto Precharge
CK
CK#
CKE
A10
BA0, BA1
tCK
tCH
tCL
tIS
tIH
tIS
tIH
tIS tIH
Row
tRCD
tRAS
tRC
tRP
CL = 2
DM
T0
T1
T2
T3
T4
T5
T5n
T6n
T6
T7
T8
DQ4,5
DQS4
Case 1: tAC (MIN) and tDQSCK (MIN)
Case 2: tAC (MAX) and tDQSCK (MAX)
DQ4,5
DQS4
tHZ (MAX)
NOP1
Command
ACTIVE
Row
Col n
READ2
Bank x
Row
Bank x
ACTIVE
Bank x
NOP1
Don’t Care
Transitioning Data
Address
NOP1
tRPRE
tDQSCK (MAX)
tAC (MAX)
DOUT
n
DOUT
n + 1
DOUT
x
DOUT
x + 1
DOUT
n
DOUT
n + 1
DOUT
x
DOUT
x + 1
tDQSCK (MIN)
tAC (MIN)
tLZ (MIN)
tRPRE
tRPST
tLZ (MIN)
Note 3
tRPST
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. Refer to Figure 38 (page 77) and Figure 39 (page 78) for detailed DQS and DQ timing.
5. DOUT n = data-out from column n.
2Gb: x16, x32 Mobile LPDDR SDRAM
Auto Precharge
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
94
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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