参数资料
型号: MT46H256M32L4CM-54IT:A
元件分类: DRAM
英文描述: 256M X 32 DDR DRAM, 5 ns, PBGA90
封装: 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
文件页数: 20/106页
文件大小: 3431K
Package Dimensions
Figure 11: 60-Ball VFBGA (10mm x 11.5mm), Package Code: CK
Ball A1 ID
Mold compound: epoxy novolac
Substrate material: plastic laminate
Ball A1 ID
0.1 A
A
0.65 ±0.05
60X 0.45
7.2
3.6
5.75 ±0.05
A
B
C
D
E
F
G
H
J
K
11.5 ±0.1
0.8 TYP
6.4
3.2
5 ±0.05
9 8 7
3 2 1
10 ±0.1
1.0 MAX
Seating
plane
Solder ball material:
SAC105 (98.5% Sn, 1% Ag, 0.5% Cu)
Dimensions apply
to solder balls
post-reflow. The
pre-reflow balls
are 0.42 on 0.4
SMD ball pads.
Note: 1. All dimensions are in millimeters.
2Gb: x16, x32 Mobile LPDDR SDRAM
Package Dimensions
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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