参数资料
型号: MT46H256M32L4CM-54IT:A
元件分类: DRAM
英文描述: 256M X 32 DDR DRAM, 5 ns, PBGA90
封装: 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
文件页数: 78/106页
文件大小: 3431K
Figure 34: Random Read Accesses
CK
CK#
T0
T1
T2
T3
T2n
T3n
T4
T5
T1n
T4n
T5n
CK
CK#
T0
T1
T2
T3
T2n
T3n
T4
T5
T1n
T4n
T5n
Command
READ
NOP
Address
Bank,
Col n
Bank,
Col x
Bank,
Col b
Bank,
Col x
Bank,
Col b
READ
Bank,
Col g
Command
Address
READ
NOP
Bank,
Col n
READ
Bank,
Col g
Don’t Care
Transitioning Data
DQ
DQS
CL = 2
DQ
DQS
CL = 3
DOUT
n1
DOUT
n + 1
DOUT
x + 1
DOUT
x
DOUT
b
DOUT
b + 1
DOUT
g + 1
DOUT
g
DOUT
n
DOUT
n + 1
DOUT
b
DOUT
b + 1
DOUT
x + 1
DOUT
x
Notes: 1. DOUTn (or x, b, g) = data-out from column n (or column x, column b, column g).
2. BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous).
3. READs are to an active row in any bank.
4. Shown with nominal tAC, tDQSCK, and tDQSQ.
2Gb: x16, x32 Mobile LPDDR SDRAM
READ Operation
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
73
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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